40MT120UHAPBF Vishay Semiconductors, 40MT120UHAPBF Datasheet - Page 5

• Manufacturer Part Number: 40MT120UHAPBF
• Manufacturer: Vishay Semiconductors

Document Number: 94507
Revision: 01-Mar-10
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Fig. 8 - Typical Diode Forward Characteristics
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18
16
14
12
10
80
60
40
20
80
60
40
20
Fig. 7 - Typical IGBT Output Characteristics
8
6
4
2
0
0
0
0.0
5
0
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 9 - Typical V
1.0
-40°C
25°C
125°C
T
2
J
= 125 °C; t
10
T
t
2.0
J
p
4
= - 40 °C
V CE (V)
V GE (V)
= 80 μs
V F (V)
p
3.0
CE
= 80 μs
6
15
vs. V
For technical questions, contact:
I CE = 80A
I CE = 40A
I CE = 20A
4.0
GE
8
(Ultrafast NPT IGBT), 80 A
5.0
10
"Half Bridge" IGBT MTP
20
40MT120UHAPbF, 40MT120UHTAPbF
[e-mail]
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12
10
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50
8
6
4
2
0
8
6
4
2
0
0
5
Fig. 12 - Typical Transfer Characteristics
5
0
Vishay High Power Products
Fig. 10 - Typical V
Fig. 11 - Typical V
V
5
CE
10
10
T J = 25°C
T J = 125°C
= 50 V; t
T
T
J
J
V GE (V)
V GE (V)
V GE (V)
= 125 °C
= 25 °C
10
p
= 10 μs
CE
CE
15
15
vs. V
vs. V
I CE = 80A
I CE = 40A
I CE = 20A
15
I CE = 80A
I CE = 40A
I CE = 20A
GE
GE
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20
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