40MT120UHAPBF Vishay Semiconductors, 40MT120UHAPBF Datasheet - Page 2

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40MT120UHAPBF

Manufacturer Part Number
40MT120UHAPBF
Description
Manufacturer
Vishay Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
40MT120UHAPBF
Quantity:
70 000
40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
www.vishay.com
2
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter
breakdown voltage
Temperature coefficient of
breakdown voltage
Collector to emitter saturation voltage
Gate threshold voltage
Temperature coefficient of
threshold voltage
Transconductance
Zero gate voltage collector current
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
Short circuit safe operating area
For technical questions, contact:
ΔV
V
SYMBOL
SYMBOL
V
(BR)CES
RBSOA
SCSOA
GE(th)
V
V
(BR)CES
C
I
I
C
C
CE(on)
Q
Q
E
E
E
E
E
E
GE(th)
GES
Q
g
CES
oes
tot
tot
res
on
off
on
off
ies
ge
gc
fe
g
J
/ΔT
J
(Ultrafast NPT IGBT), 80 A
= 25 °C unless otherwise specified)
/ΔT
"Half Bridge" IGBT MTP
= 25 °C unless otherwise specified)
J
J
I
V
V
V
R
energy losses include tail and diode
reverse recovery
V
R
energy losses include tail and diode
reverse recovery
V
V
f = 1.0 MHz
T
V
R
T
V
R
V
V
V
V
V
V
V
V
V
V
V
V
V
C
CC
GE
CC
CC
GE
CC
J
CC
J
CC
GE
GE
GE
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
g
g
g
g
= 40 A
= 150 °C, I
= 150 °C,
= 5 Ω, L = 200 μH, T
= 5 Ω, L = 200 μH, T
= 5 Ω, V
= 5 Ω, V
= V
= V
= 50 V, I
= 15 V
= 0 V
= 0 V, I
= 0 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 0 V, V
= 0 V, V
= 0 V, V
= ± 20 V
= 600 V
= 600 V, I
= 600 V, I
= 30 V
= 1000 V, V
= 900 V, V
GE
GE
TEST CONDITIONS
TEST CONDITIONS
, I
, I
GE
GE
C
C
C
C
CE
CE
CE
C
C
C
C
C
= 250 μA
= 3 mA (25 °C to 125 °C)
C
= 500 μA
= 1 mA (25 °C to 125 °C)
C
C
= 40 A, PW = 80 μs
= + 15 V to 0 V
= + 15 V to 0 V
= 40 A
= 80 A
= 40 A, T
= 80 A, T
p
= 1200 V, T
= 1200 V, T
= 1200 V, T
= 160 A
indmodules@vishay.com
= 40 A, V
= 40 A, V
p
= 1200 V
= 1200 V
J
J
J
J
= 150 °C
= 150 °C
GE
GE
= 25 °C,
= 125 °C,
J
J
J
= 25 °C
= 125 °C
= 150 °C
= 15 V,
= 15 V,
MIN.
1200
MIN.
10
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
TYP.
+ 1.1
TYP.
5521
1.14
1.35
2.49
1.60
1.62
3.22
3.36
4.53
3.88
5.35
- 12
399
187
380
171
0.4
0.2
43
35
Document Number: 94507
-
-
-
-
-
Revision: 01-Mar-10
MAX.
± 250
MAX.
8282
3.59
4.91
4.10
5.68
1.71
2.02
3.73
2.40
2.43
4.82
250
599
281
570
257
1.0
10
65
6
-
-
-
-
-
UNITS
UNITS
mV/°C
V/°C
mA
nC
mJ
μA
nA
pF
μs
S
V
V

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