40MT120UHAPBF Vishay Semiconductors, 40MT120UHAPBF Datasheet - Page 3

• Manufacturer Part Number: 40MT120UHAPBF
• Manufacturer: Vishay Semiconductors

Notes
(1)
(2)
Document Number: 94507
Revision: 01-Mar-10
DIODE SPECIFICATIONS (T
PARAMETER
Diode forward voltage drop
Reverse recovery energy of the diode
Diode reverse recovery time
Peak reverse recovery current
THERMISTOR SPECIFICATIONS (40MT120UHTAPbF only)
PARAMETER
Resistance
Sensitivity index of the
thermistor material
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature range
Storage temperature range
Junction to case
Case to sink per module
Clearance
Creepage
Mounting torque to heatsink
Weight
T
R
------ -
R
0
0
1
, T
=
1
are thermistor´s temperatures
exp
(2)
(1)
β
⎛
⎝
----- -
T
1
0
–
----- -
T
1
1
⎞
⎠
, temperature in Kelvin
Diode
IGBT
J
SYMBOL
SYMBOL
SYMBOL
For technical questions, contact:
= 25 °C unless otherwise specified)
β
R
R
R
V
E
T
T
thJC
thCS
t
I
0
(1)(2)
Stg
FM
rec
rr
rr
J
(1)
(Ultrafast NPT IGBT), 80 A
"Half Bridge" IGBT MTP
I
I
I
I
I
V
V
T
T
T
T
Heatsink compound thermal conductivity = 1 W/mK
External shortest distance in air between 2 terminals
Shortest distance along external surface of the
insulating material between 2 terminals
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
C
C
C
C
C
J
0
0
1
GE
CC
= 40 A
= 80 A
= 40 A, T
= 80 A, T
= 40 A, T
= 125 °C
= 25 °C
= 25 °C
= 85 °C
= 15 V, R
= 600 V, I
40MT120UHAPbF, 40MT120UHTAPbF
J
J
J
= 125 °C
= 125 °C
= 150 °C
g
C
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= 5 Ω, L = 200 μH
= 40 A
[e-mail]
Vishay High Power Products
MIN.
MIN.
MIN.
- 40
- 40
5.5
8
-
-
-
-
-
-
-
-
-
-
-
-
-
3 ± 10 %
TYP.
TYP.
TYP.
4000
2.98
3.90
3.08
4.29
3.12
0.06
574
120
43
30
66
-
-
-
-
-
-
www.vishay.com
MAX.
MAX.
MAX.
3.38
4.41
3.39
4.72
3.42
0.29
0.61
861
180
150
125
65
-
-
-
-
-
UNITS
UNITS
UNITS
°C/W
mm
Nm
kΩ
μJ
ns
°C
V
A
K
g
3