40MT120UHAPBF Vishay Semiconductors, 40MT120UHAPBF Datasheet - Page 4

• Manufacturer Part Number: 40MT120UHAPBF
• Manufacturer: Vishay Semiconductors

40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
www.vishay.com
4
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
1000
Fig. 2 - Power Dissipation vs. Case Temperature
0.01
100
600
500
400
300
200
100
100
80
60
40
20
0.1
10
0
0
1
0
0
1
20
20
T
C
Fig. 3 - Forward SOA
40
40
10
= 25 °C; T
60
60
V CE (V)
T C (°C)
T C (°C)
100
80
80
J
≤ 150 °C
100 120 140 160
100 120 140 160
1000
For technical questions, contact:
10 μs
100 μs
10ms
DC
10000
(Ultrafast NPT IGBT), 80 A
"Half Bridge" IGBT MTP
[e-mail]
1000
160
140
120
100
160
140
120
100
100
80
60
40
20
80
60
40
20
10
0
0
1
Fig. 5 - Typical IGBT Output Characteristics
Fig. 6 - Typical IGBT Output Characteristics
10
0
0
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 4 - Reverse BIAS SOA
2
T
2
T
T
J
J
J
= 150 °C; V
= - 40 °C; t
= 25 °C; t
100
4
4
V CE (V)
V CE (V)
V CE (V)
p
GE
p
6
= 80 μs
6
= 80 μs
1000
= 15 V
Document Number: 94507
8
8
Revision: 01-Mar-10
10 000
10
10