40MT120UHAPBF Vishay Semiconductors, 40MT120UHAPBF Datasheet - Page 6

• Manufacturer Part Number: 40MT120UHAPBF
• Manufacturer: Vishay Semiconductors

40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
www.vishay.com
6
4800
4200
3600
3000
2400
1800
1200
1000
6000
5000
4000
3000
2000
1000
600
100
10
0
0
0
0
Fig. 14 - Typical Switching Time vs. I
T
T
T
Fig. 15 - Typical Energy Loss vs. R
Fig. 13 - Typical Energy Loss vs. I
J
J
J
= 125 °C; L = 250 μH; V
= 125 °C; L = 250 μH; V
= 150 °C; L = 250 μH; V
E ON
10
20
20
I
CE
R
R
g
g
E OFF
= 5 Ω; V
= 5 Ω; V
= 40 A; V
20
40
40
R g ( Ω )
I C (A)
I C (A)
30
GE
GE
GE
60
60
E ON
= 15 V
= 15 V
= 15 V
40
CE
CE
CE
For technical questions, contact:
80
= 400 V
= 400 V
= 600 V
80
E OFF
50
td OFF
td ON
t R
t F
C
g
100
(Ultrafast NPT IGBT), 80 A
100
C
60
"Half Bridge" IGBT MTP
[e-mail]
10 000
1000
100
50
40
30
20
10
50
40
30
20
10
10
0
10
Fig. 16 - Typical Switching Time vs. R
0
0
T
J
= 150 °C; L = 250 μH; V
Fig. 18 - Typical Diode I
Fig. 17 - Typical Diode I
10
10
20
I
CE
T
J
= 125 °C; I
= 40 A; V
20
20
30
T
J
= 125 °C
R g ( Ω)
R g ( Ω )
I F (A)
30
30
40
GE
F
= 40 A
= 15 V
40
40
50
Document Number: 94507
R g = 10 Ω
R g = 50 Ω
R g = 5.0 Ω
R g = 30 Ω
CE
rr
rr
vs. R
vs. I
= 600 V
50
50
60
Revision: 01-Mar-10
td OFF
td ON
F
t R
t F
g
60
60
g
70