40MT120UHAPBF Vishay Semiconductors, 40MT120UHAPBF Datasheet - Page 7

• Manufacturer Part Number: 40MT120UHAPBF
• Manufacturer: Vishay Semiconductors

Document Number: 94507
Revision: 01-Mar-10
V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
CC
50
45
40
35
30
25
20
15
10
= 600 V; V
0
0
V
Fig. 20 - Typical Diode Q
CC
Fig. 19 - Typical Diode I
50 Ω
= 600 V; V
200
1E-005
1E-005
0.0001
0.0001
0.001
0.001
200
0.01
0.01
0.1
0.1
30 Ω
1
1
GE
1E-006
1E-006
400
= 15 V; I
D = 0.50
D = 0.50
dI F /dt (A/μs)
dI F /dt (A/μs)
400
GE
0.02
0.02
0.05
0.05
0.01
0.01
0.10
0.10
0.20
0.20
600
= 15 V; T
10 Ω
Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
SINGLE PULSE
SINGLE PULSE
( THERMAL RESPONSE )
( THERMAL RESPONSE)
CE
600
1E-005
1E-005
= 40 A; T
800
rr
rr
5.0 Ω
J
For technical questions, contact:
vs. dI
vs. dI
= 125 °C
800
1000
20A
J
40A
F
60A
F
/dt
= 125 °C
/dt
0.0001
0.0001
(Ultrafast NPT IGBT), 80 A
1200
1000
"Half Bridge" IGBT MTP
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
40MT120UHAPbF, 40MT120UHTAPbF
0.001
0.001
[e-mail]
0.01
0.01
τ
τ
J
J
τ
τ
J
J
τ
τ
1
1
Ci= τi/Ri
Ci= τi/Ri
τ
τ
1
1
Ci= i/Ri
Ci= i/Ri
10000
R
R
1000
1
1
100
R
R
16
14
12
10
1
1
10
8
6
4
2
0
τ
τ
2
2
0
τ
τ
0
R
R
0.1
0.1
2
2
Fig. 21 - Typical Capacitance vs. V
Fig. 22 - Typical Gate Charge vs. V
2
2
R
R
Notes:
Notes:
1. Duty Factor D = t1/t2
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
2. Peak Tj = P dm x Zthjc + Tc
2
2
Vishay High Power Products
R
R
τ
τ
3
3
3
3
R
R
τ
τ
3
3
3
3
100
20
Q G , Total Gate Charge (nC)
I
CE
τ
τ
V
C
C
τ
τ
GE
Ri (°C/W) τi (sec)
Ri (°C/W) τi (sec)
= 5.0 A; L = 600 μH
0.043
0.105
0.123
0.123
= 0 V; f = 1 MHz
1
1
200
40
V CE (V)
0.001214
0.044929
1.1977
1.1977
300
60
Cies
Coes
Cres
10
10
400
80
600V
CE
GE
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100
500
7