AT32UC3A0128AU Atmel Corporation, AT32UC3A0128AU Datasheet - Page 417
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AT32UC3A0128AU
Manufacturer Part Number
AT32UC3A0128AU
Description
Manufacturer
Atmel Corporation
Datasheets
1.AT32UC3A0128.pdf
(98 pages)
2.AT32UC3A0128.pdf
(826 pages)
3.AT32UC3A0128.pdf
(377 pages)
4.AT32UC3A0128.pdf
(33 pages)
5.AT32UC3A0128.pdf
(159 pages)
6.AT32UC3A0128AU.pdf
(2 pages)
Specifications of AT32UC3A0128AU
Flash (kbytes)
128 Kbytes
Pin Count
144
Max. Operating Frequency
66 MHz
Cpu
32-bit AVR
# Of Touch Channels
32
Hardware Qtouch Acquisition
No
Max I/o Pins
109
Ext Interrupts
109
Usb Transceiver
1
Usb Speed
Full Speed
Usb Interface
Device + OTG
Spi
6
Twi (i2c)
1
Uart
4
Ssc
1
Ethernet
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
384
Resistive Touch Screen
No
Dac Channels
2
Dac Resolution (bits)
16
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
32
Self Program Memory
YES
External Bus Interface
1
Dram Memory
sdram
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
3.0-3.6 or (1.65-1.95+3.0-3.6)
Operating Voltage (vcc)
3.0-3.6 or (1.65-1.95+3.0-3.6)
Fpu
No
Mpu / Mmu
Yes / No
Timers
10
Output Compare Channels
16
Input Capture Channels
6
Pwm Channels
13
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AT32UC3A0128AU-U
Manufacturer:
ATMEL
Quantity:
4
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32058K AVR32-01/12
28.7
28.7.1
Figure 28-5. Write Burst, 32-bit SDRAM Access
SDRAMC_A[12:0]
28.7.2
D[31:0]
SDWE
SDCS
SDCK
Functional Description
RAS
CAS
SDRAM Controller Write Cycle
SDRAM Controller Read Cycle
Row n
The SDRAM Controller allows burst access or single access. In both cases, the SDRAM control-
ler keeps track of the active row in each bank, thus maximizing performance. To initiate a burst
access, the SDRAM Controller uses the transfer type signal provided by the master requesting
the access. If the next access is a sequential write access, writing to the SDRAM device is car-
ried out. If the next access is a write-sequential access, but the current access is to a boundary
page, or if the next access is in another row, then the SDRAM Controller generates a precharge
command, activates the new row and initiates a write command. To comply with SDRAM timing
parameters, additional clock cycles are inserted between precharge/active (t
active/write (t
Configuration Register” on page
The SDRAM Controller allows burst access, incremental burst of unspecified length or single
access. In all cases, the SDRAM Controller keeps track of the active row in each bank, thus
maximizing performance of the SDRAM. If row and bank addresses do not match the previous
row/bank address, then the SDRAM controller automatically generates a precharge command,
activates the new row and starts the read command. To comply with the SDRAM timing param-
eters, additional clock cycles on SDCK are inserted between precharge and active commands
(t
uration register of the SDRAM Controller. After a read command, additional wait states are
generated to comply with the CAS latency (1, 2 or 3 clock delays specified in the configuration
register).
RP
) and between active and read command (t
t
RCD
= 3
col a
RCD
Dna
) commands. For definition of these timing parameters, refer to the
col b
Dnb
col c
Dnc
427. This is described in
col d
Dnd
col e
Dne
RCD
col f
Dnf
). These two parameters are set in the config-
col g
Dng
Figure 28-5
col h
Dnh
col i
Dni
below.
col j
AT32UC3A
Dnj
RP
) commands and
col k
Dnk
”SDRAMC
col l
Dnl
417
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