AT32UC3C1512C Atmel Corporation, AT32UC3C1512C Datasheet - Page 1222

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AT32UC3C1512C

Manufacturer Part Number
AT32UC3C1512C
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of AT32UC3C1512C

Flash (kbytes)
512 Kbytes
Pin Count
100
Max. Operating Frequency
66 MHz
Cpu
32-bit AVR
# Of Touch Channels
32
Hardware Qtouch Acquisition
No
Max I/o Pins
81
Ext Interrupts
100
Usb Transceiver
1
Quadrature Decoder Channels
2
Usb Speed
Full Speed
Usb Interface
Device + OTG
Spi
7
Twi (i2c)
3
Uart
5
Can
2
Lin
5
Ssc
1
Ethernet
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
16
Adc Resolution (bits)
12
Adc Speed (ksps)
2000
Analog Comparators
4
Resistive Touch Screen
No
Dac Channels
4
Dac Resolution (bits)
12
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
68
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
3.0 to 3.6 or 4.5 to 5.5
Operating Voltage (vcc)
3.0 to 3.6 or 4.5 to 5.5
Fpu
Yes
Mpu / Mmu
Yes / No
Timers
6
Output Compare Channels
22
Input Capture Channels
12
Pwm Channels
19
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes

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39.5.3.5
32117C–AVR-08/11
MEMORY_BLOCK_ACCESS
Table 39-20. MEMORY_WORD_ACCESS Details (Continued)
This instruction allows access to the entire SAB data area. Up to 32 bits of data is accessed at a
time, while the address is sequentially incremented from the previously used address.
In this mode, the SAB address, size, and access direction is not provided with each access.
Instead, the previous address is auto-incremented depending on the specified size and the pre-
v i o u s o p e r a t i o n r e p e a t e d . T h e a d d r e s s m u s t b e s e t u p i n a d v a n c e w i t h
MEMORY_SIZE_ACCESS or MEMORY_WORD_ACCESS. It is allowed, but not required, to
shift data after shifting the address.
This instruction is primarily intended to speed up large quantities of sequential word accesses. It
is possible to use it also for byte and halfword accesses, but the overhead in this is case much
larger as 32 bits must still be shifted for each access.
The following sequence should be used:
For write operations, 32 data bits must be provided, or the result will be undefined. For read
operations, shifting may be terminated once the required number of bits have been acquired.
Table 39-21. MEMORY_BLOCK_ACCESS Details
Instructions
DR output value (Address phase)
DR output value (Data read phase)
DR output value (Data write phase)
Instructions
IR input value
IR output value
DR Size
DR input value (Data read phase)
1. Use the MEMORY_SIZE_ACCESS or MEMORY_WORD_ACCESS to read or write the
2. Return to Run-Test/Idle.
3. Select the IR Scan path.
4. In Capture-IR: The IR output value is latched into the shift register.
5. In Shift-IR: The instruction register is shifted by the TCK input.
6. Return to Run-Test/Idle.
7. Select the DR Scan path. The address will now have incremented by 1, 2, or 4 (corre-
8. In Shift-DR: For a read operation, scan out the contents of the next addressed location.
9. Go to Update-DR.
10. If the block access is not complete, return to Select-DR Scan and repeat the access.
11. If the block access is complete, return to Run-Test/Idle.
first location.
sponding to the next byte, halfword, or word location).
For a write operation, scan in the new contents of the next addressed location.
Details
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xeb dddddddd dddddddd dddddddd dddddddd
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Details
10010 (0x12)
peb01
34 bits
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AT32UC3C
1222

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