BUK7610-55AL NXP Semiconductors, BUK7610-55AL Datasheet - Page 4

• Manufacturer Part Number: BUK7610-55AL
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7610-55AL_2
Product data sheet
Symbol
R
R
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
th(j-a)
th(j-mb)
10
10
(A)
I
10
D
3
2
1
T
(1) Capped at 75 A due to package.
1
mb
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to
mounting base
= 25 °C; I
Limit R
DM
(1)
DSon
is single pulse
= V
DS
/ I
D
Conditions
mounted on a printed-circuit
board; minimum footprint; vertical
in still air
see
Figure 5
Rev. 02 — 9 January 2008
10
DC
N-channel TrenchMOS standard level FET
Min
-
-
V
DS
BUK7610-55AL
(V)
Typ
50
0.25
t
100 μ s
1 ms
10 ms
100 ms
p
Max
-
0.5
© NXP B.V. 2008. All rights reserved.
= 10 μ s
003aaa737
10
2
Unit
K/W
K/W
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