BUK7610-55AL NXP Semiconductors, BUK7610-55AL Datasheet - Page 9

• Manufacturer Part Number: BUK7610-55AL
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7610-55AL_2
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
T
V
charge; typical values
0
GS
j
= 25 °C; I
= 0 V
V
D
DS
= 25 A
50
= 14 V
100
(A)
150
I
100
S
V
50
0
DS
0.0
Q
= 44 V
G
003aaa735
(nC)
150
Rev. 02 — 9 January 2008
0.3
T
j
= 175 ° C
T
j
= 25 ° C
0.6
Fig 15. Input, output and reverse transfer capacitances
(pF)
8000
6000
4000
2000
C
0.9
0
10
V
as a function of drain-source voltage; typical
values
GS
-1
V
N-channel TrenchMOS standard level FET
003aaa736
= 0 V; f = 1 M H z
SD
(V)
1.2
1
C
C
C
oss
rss
iss
BUK7610-55AL
10
© NXP B.V. 2008. All rights reserved.
V
DS
003aaa738
(V)
10
2
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