BUK7610-55AL NXP Semiconductors, BUK7610-55AL Datasheet - Page 5

• Manufacturer Part Number: BUK7610-55AL
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BUK7610-55AL_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
DSS
GSS
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
(BR)DSS
GS(th)
DSon
Z
(K/W) δ = 0.5
10
10
10
th(j-mb)
-1
-2
-3
1
10
-6
0.2
0.1
0.05
0.02
Characteristics
single shot
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
10
-5
Conditions
I
T
I
T
I
see
I
T
11
I
T
V
T
V
V
T
V
T
V
T
13
V
see
D
D
D
D
D
j
j
j
j
j
j
j
j
DS
DS
DS
DS
GS
GS
= 250 μA; V
= -55 °C
= 250 μA; V
= 25 °C
= 1 mA; V
= 1 mA; V
= 175 °C; see
= 1 mA; V
= -55 °C; see
= 175 °C
= 25 °C
= 25 °C
= 175 °C; see
Figure 10
Figure 12
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
= 10 V; I
= 10 V; I
10
-4
Rev. 02 — 9 January 2008
DS
DS
DS
GS
GS
D
D
GS
GS
GS
GS
and
and
= 25 A; T
= 25 A;
= V
= V
= V
= +20 V;
= -20 V;
Figure 10
Figure 10
= 0 V;
= 0 V; T
Figure 12
= 0 V;
= 0 V;
GS
11
13
GS
GS
; T
;
;
10
j
j
-3
= 25 °C;
j
= 25 °C;
= 25 °C
and
and
and
11
N-channel TrenchMOS standard level FET
10
Min
50
55
2
1
-
-
-
-
-
-
-
-2
BUK7610-55AL
Typ
-
-
3
-
-
-
0.05
2
2
-
8.5
10
P
-1
t
p
T
t
p
Max
-
-
4
-
4.4
500
10
100
100
20
10
© NXP B.V. 2008. All rights reserved.
(s)
003aaa734
δ =
T
t
p
t
1
Unit
V
V
V
V
V
μA
μA
nA
nA
mΩ
mΩ
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