BUK7610-55AL NXP Semiconductors, BUK7610-55AL Datasheet - Page 7

• Manufacturer Part Number: BUK7610-55AL
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7610-55AL_2
Product data sheet
Fig 6. Output characteristics: drain current as a
Fig 8. Forward transconductance as a function of
(A)
I
400
300
200
100
g
(S)
D
40
fs
35
30
25
20
0
T
T
function of drain-source voltage; typical values
drain current; typical values
0
0
j
j
20
18
16
14
12
= 25 °C
= 25 °C; V
2
20
DS
= 25 V
4
40
V
GS
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
(V) = 10
6
60
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8
003aaa732
I
V
D
DS
(A)
(V)
80
Rev. 02 — 9 January 2008
10
Fig 7. Drain-source on-state resistance as a function
Fig 9. Transfer characteristics: drain current as a
R
(mΩ)
(A)
DSon
150
I
100
D
20
15
10
50
5
0
0
T
V
of drain current; typical values
function of gate-source voltage; typical values
0
0
DS
j
= 25 °C
N-channel TrenchMOS standard level FET
= 25 V
T
j
= 175 ° C
7
2
100
8
BUK7610-55AL
4
9
200
T
10
j
= 25 ° C
6
V
GS
(V) = 20
300
© NXP B.V. 2008. All rights reserved.
003aaa733
8
003aaa731
I
V
D
GS
(A)
(V)
400
10
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