BLA0912-250R NXP Semiconductors, BLA0912-250R Datasheet - Page 10

• Manufacturer Part Number: BLA0912-250R
• Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap
• Manufacturer: NXP Semiconductors

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 12.
BLA0912-250R
Product data sheet
Document ID
BLA0912-250R v.3
Modifications:
BLA0912-250R v.2
BLA0912-250R v.1
Revision history
Table 11.
Acronym
DC
DME
JTIDS
LDMOS
LDMOST
Mode-S
RF
SMD
TACAN
TCAS
VSWR
Release date
20101201
20101015
20100303
•
•
Table 10 on page
Table 10 on page
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Direct Current
Distance Measuring Equipment
Joint Tactical Information Distribution System
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Mode Select
Radio Frequency
Surface Mounted Device
TACtical Air Navigation
Traffic Collision Avoidance System
Voltage Standing-Wave Ratio
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Rev. 3 — 1 December 2010
6: The remark of component C8 has been removed.
6: The value of component C8 has been specified in more detail.
Change notice
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-
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Avionics LDMOS power transistor
BLA0912-250R
Supersedes
BLA0912-250R v.2
BLA0912-250R v.1
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© NXP B.V. 2010. All rights reserved.
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