BLA0912-250R NXP Semiconductors, BLA0912-250R Datasheet - Page 4

• Manufacturer Part Number: BLA0912-250R
• Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Application information
BLA0912-250R
Product data sheet
7.1 Impedance information
7.2 Application circuit
Table 8.
Typical values per section unless otherwise specified.
f
MHz
960
1030
1090
1140
1215
Fig 1.
Fig 2.
L1
C1
Definition of transistor impedance
See
Layout of class-AB application circuit
Typical impedance
L2
Table 9
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for details of striplines.
L3
Rev. 3 — 1 December 2010
C2
L4
Z
Ω
0.89 − j1.70
1.37 − j1.23
2.09 − j1.27
2.40 − j1.97
1.51 − j2.61
S
gate
C3
Z
S
001aaf059
Z
drain
L
Avionics LDMOS power transistor
C4
BLA0912-250R
Z
Ω
1.53 − j1.13
1.47 − j0.99
1.38 − j0.85
1.30 − j0.71
1.17 − j0.47
L
L5 L6
© NXP B.V. 2010. All rights reserved.
C5
001aab085
L7
4 of 13
L8