BLA0912-250R NXP Semiconductors, BLA0912-250R Datasheet - Page 3

• Manufacturer Part Number: BLA0912-250R
• Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
BLA0912-250R
Product data sheet
6.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
RF performance in common source class-AB circuit; T
specified.
The BLA0912-250R is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: V
f = 960 MHz to 1215 MHz at rated load power.
Symbol Parameter
V
V
I
I
I
g
R
Symbol
V
f
P
G
η
Z
T
P
α
t
t
DSS
DSX
GSS
r
f
j
fs
D
th(j-h)
h
resp(sp)
(BR)DSS
GS(th)
DS
L
droop(pulse)
DS(on)
p
= 25
°
C; per section unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
DC characteristics
RF characteristics
Parameter
drain-source voltage
frequency
output power
power gain
drain efficiency
transient thermal impedance
from junction to heatsink
heatsink temperature
pulse droop power
spurious response
rise time
fall time
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 December 2010
Conditions
V
V
V
V
V
V
Conditions
t
P
t
t
t
VSWR
GS
DS
GS
GS
DS
GS
DS
GS
p
p
p
p
L
= 100 μs; δ = 10 %
= 100 μs; δ = 10 %
= 100 μs; δ = 10 %
= 100 μs; δ = 10 %
= 250 W
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 20 V; V
= 9 V; I
load
GSth
h
= 25
D
D
= 2 : 1
+ 9 V;
DS
D
D
= 3 mA
= 10 A
Avionics LDMOS power transistor
DS
= 300 mA
= 10 A
= 36 V
°
C; Z
= 0 V
BLA0912-250R
th
= 0.15 K/W; unless otherwise
Min
-
960
250
12
40
-
−55
-
-
-
-
Min
75
4
-
45
-
-
-
DS
= 36 V;
Typ
-
-
-
13
50
-
-
0.1
-
25
6
© NXP B.V. 2010. All rights reserved.
Typ
-
-
-
-
-
9
60
Max
36
1215
0.2
+70
0.5
−60
50
25
Max Unit
-
5
1
-
1
-
-
Unit
V
MHz
W
dB
%
K/W
°C
dB
dBc
ns
ns
3 of 13
V
V
μA
A
μA
S
mΩ