BLA0912-250R NXP Semiconductors, BLA0912-250R Datasheet - Page 7

• Manufacturer Part Number: BLA0912-250R
• Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Test information
BLA0912-250R
Product data sheet
Fig 4.
(dB)
G
p
15
13
11
9
7
5
940
T
t
Power gain and drain efficiency as function of
frequency; typical values
p
h
= 100 μs; δ = 10 %.
= 25 °C; V
990
8.1 RF performance
1040
DS
η
G
= 36 V; I
Typical RF performance measured in common source class-AB test circuit at P
and 960 MHz to 1215 MHz frequency band. T
otherwise specified.
D
p
1090
Dq
= 150 mA; class-AB;
1140
f (MHz)
1190
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001aab078
1240
Rev. 3 — 1 December 2010
55
45
35
25
15
5
(%)
η
D
Fig 5.
(dB)
G
p
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
18
16
14
12
10
8
6
4
2
0
T
t
Power gain as a function of load power;
typical values
p
h
= 100 μs; δ = 10 %.
= 25 °C; V
h
(2)
= 25 °C; Z
Avionics LDMOS power transistor
DS
100
(5)
(1)
= 36 V; I
BLA0912-250R
th(j-h)
Dq
= 0.15 K/W; unless
(4) (3)
= 150 mA; class-AB;
200
© NXP B.V. 2010. All rights reserved.
P
L
001aab079
(W)
300
L
= 250 W
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