BLA0912-250R NXP Semiconductors, BLA0912-250R Datasheet - Page 13

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap

BLA0912-250R

Manufacturer Part Number
BLA0912-250R
Description
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLA0912-250R
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLA0912-250R
Manufacturer:
NXP
Quantity:
5 000
Part Number:
BLA0912-250R,112
Manufacturer:
NXP
Quantity:
1 400
NXP Semiconductors
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
7.2
8
8.1
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Ruggedness in class-AB operation . . . . . . . . . 3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Impedance information . . . . . . . . . . . . . . . . . . . 4
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 4
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 7
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Avionics LDMOS power transistor
BLA0912-250R
Document identifier: BLA0912-250R
Date of release: 1 December 2010
All rights reserved.

Related parts for BLA0912-250R