BLA0912-250R NXP Semiconductors, BLA0912-250R Datasheet - Page 5

• Manufacturer Part Number: BLA0912-250R
• Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLA0912-250R
Product data sheet
Table 9.
See
Striplines are on a Rodgers Duroid 6010 Printed-Circuit Board (PCB);
thickness = 0.64 mm
Component
Input circuit
L1
C1
L2
L3
C2
L4
C3
Output circuit
C4
L5
L6
C5
L7
L8
1/4 λ line
Figure
2.
Layout details
Description
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 December 2010
Dimensions
5 mm × 0.8 mm
1.2 mm × 3.5 mm
capacitor pad: 1 mm × 1 mm (1×)
curve: width 0.8 mm; angle 90°; radius 0.8 mm (10×)
vertical: 3.9 mm × 0.8 mm (2×)
vertical: 9.4 mm × 0.8 mm (3×)
horizontal: 0.5 mm × 0.8 mm (4×)
3 mm × 2 mm
4 mm × 6.5 mm
5 mm × 1 mm
2.5 mm × 2.3 mm
4 mm × 1 mm
curve: width 0.8 mm; angle 90°; radius 0.8 mm (6×)
vertical: 2.2 mm × 0.8 mm (2×)
vertical: 6 mm × 0.8 mm (1×)
horizontal: 1 mm × 0.8 mm (2×)
curve: width 1 mm; angle 90°; radius 0.8 mm
vertical: 5 mm × 1 mm
horizontal: 19 mm × 1 mm
8.8 mm × 30 mm + 0.2 mm × 13 mm
0.2 mm × 13 mm + 19 mm × 17.1 mm
3 mm × 6.6 mm
2.5 mm × 0.8 mm
Avionics LDMOS power transistor
BLA0912-250R
ε
r
= 10.2 F/m;
© NXP B.V. 2010. All rights reserved.
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