BF1207 NXP Semiconductors, BF1207 Datasheet - Page 12

• Manufacturer Part Number: BF1207
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 10.
Common source; T
[1]
[2]
BF1207
Product data sheet
Symbol Parameter
y
C
C
C
C
G
NF
Xmod
iss(G1)
iss(G2)
oss
rss
tr
fs

For the MOSFET not in use: V
Measured in
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance f = 100 MHz
power gain
noise figure
cross-modulation
Dynamic characteristics for amplifier B
Figure 30
8.2 Dynamic characteristics for amplifier B
amb
= 25
test circuit.

C; V
G1-S(A)
G2-S
= 0 V; V
= 4 V; V
Conditions
T
f = 100 MHz
f = 1 MHz
f = 100 MHz
B
f = 11 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
input level for k = 1 %; f
j
S
All information provided in this document is subject to legal disclaimers.
f = 200 MHz; G
f = 400 MHz; G
f = 800 MHz; G
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
= 25 C
= B
DS(A)
DS
S(opt)
= 5 V; I
Rev. 2 — 7 September 2011
= 0 V.
; B
S
L
S
S
D
= B
= 20 mS; B
= Y
= Y
S
S
S
= 14 mA.
L(opt)
= 2 mS; G
= 2 mS; G
= 3.3 mS; G
S(opt)
S(opt)
w
= 50 MHz; f
[1]
S
= 0 S
L
L
= 0.5 mS
= 1 mS
L
= 1 mS
unw
= 60 MHz
Dual N-channel dual gate MOSFET
[2]
Min
26
-
-
-
-
30
27
23
-
-
-
90
-
-
100
Typ
31
1.8
3.5
0.8
20
34
31
27
5
1.3
1.4
-
88
94
103
© NXP B.V. 2011. All rights reserved.
BF1207
Max Unit
41
2.3
-
-
-
38
35
31
-
-
-
-
-
-
-
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBV
dBV
dBV
dBV
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