BF1207 NXP Semiconductors, BF1207 Datasheet - Page 7

• Manufacturer Part Number: BF1207
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1207
Product data sheet
Fig 4.
(mA)
I
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
D
35
30
25
20
15
10
5
0
0
V
values
Amplifier A: transfer characteristics; typical
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(A)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
8.1.1 Graphs for amplifier A
= 5 V; T
0.4
j
= 25 C.
0.8
1.2
1.6
(2)
(3)
All information provided in this document is subject to legal disclaimers.
V
001aac882
G1-S
(1)
(4)
(5)
(6)
(7)
(V)
Rev. 2 — 7 September 2011
2.0
Fig 5.
(mA)
I
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
(8) V
(9) V
D
32
24
16
8
0
0
V
Amplifier A: output characteristics; typical
values
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
DS(A)
= 5 V; V
= 1.9 V.
= 1.8 V.
= 1.7 V.
= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 1.1 V.
Dual N-channel dual gate MOSFET
G2-S
2
= 4 V; T
j
= 25 C.
4
V
© NXP B.V. 2011. All rights reserved.
DS
001aaa883
BF1207
(V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
6
7 of 23