BF1207 NXP Semiconductors, BF1207 Datasheet - Page 3

Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch

BF1207

Manufacturer Part Number
BF1207
Description
Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
BF1207
Product data sheet
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Type number
Type number
BF1207
Symbol
I
I
I
P
T
T
BF1207
Per MOSFET
V
D
G1
G2
stg
j
DS
tot
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
T
sp
is the temperature at the soldering point of the source lead.
Ordering information
Marking
Limiting values
Parameter
drain-source voltage
drain current
gate1 current
gate2 current
total power dissipation
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 2 — 7 September 2011
Description
plastic surface mounted package; 6 leads
Conditions
DC
DC
T
sp
Marking code
M2*
 107 C
Dual N-channel dual gate MOSFET
[1]
[1]
Min
-
-
-
-
-
65
-
Max
6
30
10
10
180
+150
150
© NXP B.V. 2011. All rights reserved.
BF1207
Unit
V
mA
mA
mA
mW
C
C
Version
SOT363
3 of 23

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