BF1207 NXP Semiconductors, BF1207 Datasheet - Page 6

• Manufacturer Part Number: BF1207
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Dynamic characteristics
Table 8.
Common source; T
[1]
[2]
BF1207
Product data sheet
Symbol
y
C
C
C
C
G
NF
Xmod
iss(G1)
iss(G2)
oss
rss
tr
fs

For the MOSFET not in use: V
Measured in
Parameter
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance
power gain
noise figure
cross-modulation
Dynamic characteristics for amplifier A
Figure 29
8.1 Dynamic characteristics for amplifier A
amb
= 25
test circuit.

C; V
G1-S(B)
G2-S
= 0 V; V
= 4 V; V
All information provided in this document is subject to legal disclaimers.
T
f = 100 MHz
f = 1 MHz
input level for k = 1 %; f
Conditions
f = 100 MHz
f = 100 MHz
B
f = 11 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
f
unw
j
S
DS(B)
f = 200 MHz; G
f = 400 MHz; G
f = 800 MHz; G
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
= 25 C
DS
= B
= 60 MHz
= 5 V; I
Rev. 2 — 7 September 2011
= 0 V.
S(opt)
; B
D
S
L
S
S
= 18 mA.
= 20 mS; B
= B
= Y
= Y
S
S
S
L(opt)
= 2 mS; G
= 2 mS; G
= 3.3 mS; G
S(opt)
S(opt)
w
[1]
= 50 MHz;
S
= 0 S
L
L
= 0.5 mS
= 1 mS
L
= 1 mS
Dual N-channel dual gate MOSFET
[2]
Min
25
-
-
-
-
30
26
21
-
-
-
90
-
-
100
Typ
30
2.2
3.5
0.9
20
34
30
25
3.0
1.3
1.4
-
90
99
105
© NXP B.V. 2011. All rights reserved.
BF1207
Max
40
2.7
-
-
-
38
34
29
-
-
-
-
-
-
-
Unit
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBV
dBV
dBV
dBV
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