BF1207 NXP Semiconductors, BF1207 Datasheet - Page 2

• Manufacturer Part Number: BF1207
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
BF1207
Product data sheet
1.4 Quick reference data
Table 1.
Per MOSFET unless otherwise specified.
[1]
Table 2.
Symbol Parameter
P
C
NF
Xmod
T
Pin
1
2
3
4
5
6
V
I
y
C
D
j
DS
tot
iss(G1)
rss
fs

T
sp
is the temperature at the soldering point of the source lead.
cross-modulation
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate1
reverse transfer capacitance f = 100 MHz
noise figure
junction temperature
Quick reference data
Discrete pinning
Description
drain (AMP A)
source
drain (AMP B)
gate1 (AMP B)
gate2
gate1 (AMP A)
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2011
Simplified outline
Conditions
DC
DC
T
f = 1 MHz
f = 100 MHz
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
input level for k = 1 % at
40 dB AGC
sp
amplifier A; I
amplifier B; I
amplifier A
amplifier B
amplifier A
amplifier B
 107 C
1
6
5
2
3
4
D
D
= 18 mA
= 14 mA
Dual N-channel dual gate MOSFET
Symbol
[1]
G1B
G1A
G2
Min Typ
-
-
-
25
26
-
-
-
-
-
100
100
-
AMP B
AMP A
© NXP B.V. 2011. All rights reserved.
-
-
-
30
31
2.2
1.9
20
1.3
1.4
105
103
-
sym108
BF1207
Max Unit
6
30
180
40
41
2.7
2.4
-
-
-
-
-
150
DB
S
DA
V
mA
mW
mS
mS
pF
pF
fF
dB
dB
dBV
dBV
C
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