BF1207 NXP Semiconductors, BF1207 Datasheet - Page 9

• Manufacturer Part Number: BF1207
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1207
Product data sheet
Fig 9.
Fig 11. Amplifier A: drain current as a function of gain reduction; typical values
(dBμV)
V
unw
120
110
100
90
80
0
V
f
Amplifier A: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
V
unw
DS(A)
DS(A)
= 60 MHz; T
= V
= V
10
DS(B)
DS(B)
= 5 V; V
= 5 V; V
amb
20
= 25 C; see
G1-S(B)
G1-S(B)
30
(mA)
I
= 0 V; f
= 0 V; f = 50 MHz; T
D
32
24
16
gain reduction (dB)
8
0
Figure
0
40
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001aac887
w
= 50 MHz;
29.
10
Rev. 2 — 7 September 2011
50
amb
20
= 25 C; see
Fig 10. Amplifier A: gain reduction as a function of
30
reduction
gain
(dB)
10
20
30
40
50
Figure
gain reduction (dB)
0
0
V
Figure
AGC voltage; typical values
40
DS(A)
001aac889
29.
= V
29.
50
DS(B)
1
Dual N-channel dual gate MOSFET
= 5 V; V
2
G1-S(B)
= 0 V; f = 50 MHz; see
3
© NXP B.V. 2011. All rights reserved.
V
001aac888
AGC
BF1207
(V)
4
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