BF1207 NXP Semiconductors, BF1207 Datasheet - Page 13

Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch

BF1207

Manufacturer Part Number
BF1207
Description
Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BF1207
Product data sheet
Fig 16. Amplifier B: transfer characteristics; typical
(mA)
I
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
D
30
20
10
0
0
V
values
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(B)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
8.2.1 Graphs for amplifier B
= 5 V; V
0.4
G1-S(A)
0.8
= 0 V; T
1.2
j
= 25 C.
(2)
1.6
All information provided in this document is subject to legal disclaimers.
V
001aac894
(1)
G1-S
(3)
(4)
(5)
(6)
(7)
(V)
Rev. 2 — 7 September 2011
2
Fig 17. Amplifier B: output characteristics; typical
(mA)
I
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
D
32
24
16
8
0
0
V
values
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G1-S(B)
G2-S
= 4 V; V
= 1.7 V.
= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 1.1 V.
Dual N-channel dual gate MOSFET
G1-S(A)
2
= 0 V; T
j
= 25 C.
4
V
© NXP B.V. 2011. All rights reserved.
DS
001aac895
BF1207
(V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
6
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