MBM29LV320TE80TN Meet Spansion Inc., MBM29LV320TE80TN Datasheet
MBM29LV320TE80TN
Related parts for MBM29LV320TE80TN
MBM29LV320TE80TN Summary of contents
Page 1
MBM29LV320TE MBM29LV320BE Data Sheet (Retired Product) This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications There is no change to this data ...
Page 2
This page left intentionally blank MBM29LV320TE/BE_DS05-20894-5E July 31, 2007 ...
Page 3
SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...
Page 4
FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS × 8/2 M × 16) BIT MBM29LV320TE MBM29LV320BE ■ DESCRIPTION The MBM29LV320TE/ M-bit, 3.0 V-only Flash memory organized bytes of 8 bits each or ...
Page 5
The device is pin and command set compatible with JEDEC standard E command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch ...
Page 6
MBM29LV320TE/BE ■ FEATURES • 0.23 μm Process Technology • Single 3.0 V Read, Program, and Erase Minimized system level power requirements • Compatible with JEDEC-standard Commands Use the same software commands as E • Compatible with JEDEC-standard Worldwide Pinouts 48-pin ...
Page 7
PIN ASSIGNMENTS RESET N.C. WP/ACC RY/ ...
Page 8
MBM29LV320TE/BE (Continued N.C. N. N.C. N.C. RY/BY WP N.C. N.C. 8 80/90/10 FBGA (TOP VIEW) Marking Side BYTE DQ 13 ...
Page 9
PIN DESCRIPTION MBM29LV320 TE/BE Pin Configuration Table Pin RESET RY/BY BYTE WP/ACC N. MBM29LV320TE/BE Function Address Inputs Data Inputs/Outputs ...
Page 10
MBM29LV320TE/BE ■ BLOCK DIAGRAM RY/BY Buffer State BYTE Control RESET WP/ACC Command Register CE OE Low V Detector ■ LOGIC SYMBOL 10 80/90/10 RY/BY Erase Voltage Generator ...
Page 11
DEVICE BUS OPERATION MBM29LV320TE/BE User Bus Operations Table (BYTE = V Operation Auto-Select Manufacturer Code * 1 Auto-Select Device Code * 1 Extended Auto-Select Device Code * Read * 3 Standby Output Disable Write (Program/Erase) Enable Sector Group Protection ...
Page 12
MBM29LV320TE/BE MBM29LV320TE/BE User Bus Operations Table (BYTE = V Operation Auto-Select Manufacturer Code * Auto-Select Device Code * 1 Extended Auto-Select Device Code * 3 Read * Standby Output Disable Write (Program/Erase) Enable Sector Group Protection * 2, Verify Sector ...
Page 13
MBM29LV320TE/BE Command Definitions Table First Bus Bus Command Write Write Cycle Cycles Sequence Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Word Read/ 1 XXXh F0h Reset *6 Byte Word 555h Read/ 3 AAh Reset ...
Page 14
MBM29LV320TE/BE (Continued This command is valid during Fast Mode This command is valid while RESET = The valid addresses are This command is valid during HiddenROM mode ...
Page 15
MBM29LV320TE/BE Sector Group Protection Verify Autoselect Codes Table Type Byte Manufacture’s Code Word Byte MBM29LV320TE Word Device Code Byte MBM29LV320BE Word Extend Byte Device MBM29LV320TE/BE Word Code Byte Sector Group Protection Word * for byte mode. At ...
Page 16
MBM29LV320TE/BE ■ FLEXIBLE SECTOR-ERASE ARCHITECTURE Sector Address Sector SA0 SA1 SA2 ...
Page 17
Sector Address Sector SA32 SA33 SA34 ...
Page 18
MBM29LV320TE/BE (Continued) Sector Address Sector SA65 SA66 SA67 SA68 1 1 ...
Page 19
Sector Address Table (MBM29LV320BE) Sector Address Sector SA70 SA69 SA68 ...
Page 20
MBM29LV320TE/BE Sector Address Sector SA37 SA36 SA35 SA34 ...
Page 21
Sector Address Sector SA4 SA3 SA2 SA1 0 ...
Page 22
MBM29LV320TE/BE Sector Group Address Table (MBM29LV320TE) Sector Group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 1 SGA5 0 1 SGA6 0 1 SGA7 0 1 SGA8 1 0 SGA9 ...
Page 23
Sector Group Address Table (MBM29LV320BE) Sector Group SGA0 SGA1 SGA2 SGA3 SGA4 SGA5 SGA6 ...
Page 24
MBM29LV320TE/BE Common Flash Memory Interface Code Table Description Query-unique ASCII string “QRY” Primary OEM Command Set 02h : AMD/FJ standard type Address for Primary Extended Table Alternate OEM Command Set (00h = not applicable) Address for Alternate OEM Extended Table ...
Page 25
Description Query-unique ASCII string “PRI” Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock 00h = Required Erase Suspend 02h = To Read & Write Sector Protection X = Number of sectors in per group Sector Temporary ...
Page 26
MBM29LV320TE/BE ■ FUNCTIONAL DESCRIPTION 1. Read Mode The device has two control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for a device selection ...
Page 27
V ) represents the manufacturer’s code (Fujitsu = 04h) and word 1 (A Word identifier code. Word “MBM29LV320TE/BE Sector Group Protection Verify Autoselect Codes Table” and ...
Page 28
MBM29LV320TE/BE In addition to normal sector group protection, the device has Extended Sector Group Protection as extended function. This function enables to protect sector group by forcing V sequence. Unlike conventional procedure not necessary to force V extended ...
Page 29
COMMAND DEFINITIONS The device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. ...
Page 30
MBM29LV320TE/BE The automatic programming operation is completed when the data on DQ bit at which the device return to the read mode and addresses are no longer latched. See “Hardware Sequence Flags Table”. Therefore the device requires that a valid ...
Page 31
The system is not required to provide any controls or timings during these operations. The system can determine the status of the erase operation by using DQ RY/BY. The ...
Page 32
MBM29LV320TE/BE (2) Fast Programming During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program Algorithm is executed by writing program set-up command (A0h) and data write cycles (PA/PD). (See “8. Em- Algorithm for Fast ...
Page 33
Please note that the sector erase command is prohibited during HiddenROM mode. If the sector erase command is appeared in this mode, data of the address will be erased. 11. HiddenROM Protect Command There are two methods to protect the ...
Page 34
MBM29LV320TE/BE 13 Data Polling The device features Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm an attempt to read the device produces ...
Page 35
User Bus Operations Tables (BYTE = V and BYTE = V )” (■DEVICE BUS OPERATIONS The DQ failure condition may also appear if a user tries to program a ...
Page 36
MBM29LV320TE/BE The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ gone high. The system may continue to monitor the toggle bit and DQ mining the status as described in the previous paragraph. ...
Page 37
Low V Write Inhibit CC To avoid initiation of a write cycle during V < V than V (Min the command register is disabled and all internal program/erase circuits are LKO CC LKO disabled. Under ...
Page 38
MBM29LV320TE/BE ■ ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Ambient Temperature with Power Applied Voltage with Respect to Ground All pins except A OE, and RESET * Power Supply Voltage * OE, and RESET * ...
Page 39
MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V −0.5 V − +2.0 V +14.0 V +13 0 Note : This waveform is applied for A MBM29LV320TE/BE ...
Page 40
MBM29LV320TE/BE ■ DC CHARACTERISTICS Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current 1 V Active Current * Active Current * CC V Current (Standby Current (Standby, Reset) CC ...
Page 41
AC CHARACTERISTICS • Read Only Operations Characteristics Parameter Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From ...
Page 42
MBM29LV320TE/BE • Write/Erase/Program Operations Parameter Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Read Enable Hold Toggle and Data Polling Time Read Recover Time Before Write Read Recover Time Before Write (OE ...
Page 43
Parameter BYTE Switching Low to Output High-Z BYTE Switching High to Output Active Program/Erase Valid to RY/BY Delay Delay Time from Embedded Output Enable Erase Time-out Time Erase Suspend Transition Time *1 : This does not include the preprogramming ...
Page 44
MBM29LV320TE/BE ■ ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Program/Erase Cycle ■ TSOP (1) PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance WP/ACC Pin Capacitance Notes : • ...
Page 45
TIMING DIAGRAM • Key to Switching Waveforms 1. Read Operation Timing Diagram Address Outputs MBM29LV320TE/BE WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Change Change from from ...
Page 46
MBM29LV320TE/BE 2. Hardware Reset/Read Operation Timing Diagram Address RESET High-Z Outputs 3. Alternate WE Controlled Program Operation Timing Diagram 3rd Bus Cycle 555h Address GHWL WE t A0h Data ...
Page 47
Alternate CE Controlled Program Operation Timing Diagram Address GHEL CE Data Notes : • address of the memory location to be programmed. • data to be programmed at byte address. ...
Page 48
MBM29LV320TE/BE 5. Chip/Sector Erase Operation Timing Diagram Address 555h GHWL WE Data t VCS the sector address for Sector Erase. Addresses = 555h (Word), AAAh (Byte) for Chip ...
Page 49
Data Polling during Embedded Algorithm Operation Timing Diagram Data Data BUSY RY/BY = Valid Data (The device has completed the Embedded operation ...
Page 50
MBM29LV320TE/ vs Enter Erase Embedded Suspend Erasing WE Erase Suspend Erase Toggle DQ and with read from the erase-suspended sector. ...
Page 51
Word Mode Configuration Timing Diagram CE BYTE ELFH 12. Byte Mode Configuration Timing Diagram CE BYTE t ELFL 13. BYTE ...
Page 52
MBM29LV320TE/BE 14. Sector Group Protection Timing Diagram ...
Page 53
Temporary Sector Group Unprotection Timing Diagram VIDR t VCS RESET CE WE RY/BY MBM29LV320TE/BE t Program or Erase Command Sequence VLHT Unprotection period Retired Product DS05-20894-5E_July 31, 2007 80/90/10 t VLHT t VLHT ...
Page 54
MBM29LV320TE/BE 16. Extended Sector Group Protection Timing Diagram VCS RESET t VLHT t VIDR Address Data SPAX : Sector Group Address to be protected SPAY : Next ...
Page 55
Accelerated Program Timing Diagram VACCR t VCS V ACC V IH WP/ACC CE WE RY/BY MBM29LV320TE/BE t Program Command Sequence VLHT Acceleration period Retired Product DS05-20894-5E_July 31, 2007 80/90/10 t VLHT t VLHT 55 ...
Page 56
MBM29LV320TE/BE ■ FLOW CHART 1. Embedded Program TM Algorithm EMBEDDED ALGORITHM Increment Address Notes: • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. 56 80/90/10 Start Write Program Command Sequence (See Below) ...
Page 57
Embedded Erase TM Algorithm EMBEDDED ALGORITHM Chip Erase Command Sequence (Address/Command): 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Note : The sequence is applied for × 16 mode. The addresses differ from × 8 mode. MBM29LV320TE/BE Start Write Erase Command ...
Page 58
MBM29LV320TE/BE 3. Data Polling Algorithm * : DQ is rechecked even 80/90/10 Start Read Byte ( Addr Yes = Data Yes ...
Page 59
Toggle Bit Algorithm *1 : Read toggle bit twice to determine whether it is toggling Recheck toggle bit because it may stop toggling as DQ MBM29LV320TE/BE Start Read Addr. = "H" or ...
Page 60
MBM29LV320TE/BE 5. Sector Group Protection Algorithm Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command * : byte mode 80/90/10 Start Setup Sector Group Addr ...
Page 61
Temporary Sector Group Unprotection Algorithm *1 : All protected sectors groups are unprotected All previously protected sectors groups are protected once again. MBM29LV320TE/BE Start RESET = Perform Erase or Program Operations RESET = V ...
Page 62
MBM29LV320TE/BE 7. Extended Sector Group Protection Algorithm Device is Operating in Temporary Sector Group Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed 62 80/90/10 Start RESET = V ID ...
Page 63
Embedded Program TM Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address Notes : • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. MBM29LV320TE/BE Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program ...
Page 64
... MBM29LV320TE/BE ■ ORDERING INFORMATION MBM29LV320 T E DEVICE NUMBER/DESCRIPTION MBM29LV320 32Mega-bit (4 M × 8-Bit × 16-Bit) Flash Memory 3.0 V-only Read, Program, and Erase Part No. MBM29LV320TE80TN MBM29LV320TE90TN MBM29LV320TE10TN MBM29LV320TE80TR MBM29LV320TE90TR MBM29LV320TE10TR MBM29LV320TE80PBT MBM29LV320TE90PBT MBM29LV320TE10PBT MBM29LV320BE80TN MBM29LV320BE90TN MBM29LV320BE10TN MBM29LV320BE80TR MBM29LV320BE90TR MBM29LV320BE10TR MBM29LV320BE80PBT MBM29LV320BE90PBT ...
Page 65
PACKAGE DIMENSIONS 48-pin plastic TSOP(1) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00 ± (.787 ± .008) * 18.40 ± (.724 ± .008) "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6-7 C 48-pin plastic TSOP(1) (FPT-48P-M20) LEAD No. 1 INDEX 24 0.10(.004) ...
Page 66
MBM29LV320TE/BE (Continued) 63-pin plastic FBGA (BGA-63P-M01) 11.00±0.10(.433±.004) INDEX AREA 0.10(.004) 2001 FUJITSU LIMITED B63001S-c-2 80/90/10 +0.15 1.05 –0.10 +.006 .041 –.004 (Mounting height) 0.38±0.10 (.015±.004) (Stand off) (4.00(.157)) 7.00±0.10 (.276±.004) (5.60(.220 Dimensions in mm (inches) . ...
Page 67
Revision History Revision DS05-20894-5E（July 31, 2007） The following comment is added. This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. MBM29LV320TE/BE Retired Product DS05-20894-5E_July 31, 2007 ...
Page 68
MBM29LV320TE/BE FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 ...