MBM29LV320TE80TN Meet Spansion Inc., MBM29LV320TE80TN Datasheet - Page 4

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MBM29LV320TE80TN

Manufacturer Part Number
MBM29LV320TE80TN
Description
Flash Memory Cmos 32 M 4 M ? 8/2 M ? 16 Bit
Manufacturer
Meet Spansion Inc.
Datasheet
FUJITSU SEMICONDUCTOR
FLASH MEMORY
CMOS
32 M (4 M × 8/2 M × 16) BIT
MBM29LV320TE
MBM29LV320BE
■ DESCRIPTION
■ PRODUCT LINE UP
■ PACKAGES
(Continued)
Power Supply Voltage (V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words
of 16 bits each. The device is offered in a 48-pin TSOP (1) and 63-ball FBGA packages. This device is designed
to be programmed in-system with the standard system 3.0 V V
for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.
The standard device offers access times 80 ns, 90 ns and 100 ns, allowing operation of high-speed microproces-
sors without wait state. To eliminate bus contention the device has separate chip enable(CE), write enable(WE)
and output enable (OE) controls.
DATA SHEET
48-pin plastic TSOP (1)
(FPT-48P-M19)
Part No.
Marking Side
80
80/90/10
Retired Product DS05-20894-5E_July 31, 2007
/
Marking Side
90
48-pin plastic TSOP (1)
/
(FPT-48P-M20)
10
80
80
80
30
V
CC
= 3.3 V
CC
MBM29LV320TE/BE
supply. 12.0 V V
+0.3 V
−0.3 V
90
90
90
35
PP
63-ball plastic FBGA
and 5.0 V V
(BGA-63P-M01)
DS05-20894-5E
V
CC
CC
= 3.0 V
are not required
100
100
100
35
(Continued)
+0.6 V
−0.3 V

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