MBM29LV320TE80TN Meet Spansion Inc., MBM29LV320TE80TN Datasheet - Page 40

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MBM29LV320TE80TN

Manufacturer Part Number
MBM29LV320TE80TN
Description
Flash Memory Cmos 32 M 4 M ? 8/2 M ? 16 Bit
Manufacturer
Meet Spansion Inc.
Datasheet
40
MBM29LV320TE/BE
■ DC CHARACTERISTICS
* 1: The I
* 2: I
* 3: Automatic sleep mode enables the low power mode when addresses remain stable for 150 ns.
* 4: Applicable for only V
Input Leakage Current
Output Leakage Current
A
Current
V
V
V
V
V
WP/ACC Accelerated Program
Current
Input Low Voltage
Input High Voltage
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Acceleration
Voltage for Autoselect and Sector
Group Protection (A
Output Low Voltage
Output High Voltage
Low V
(Automatic Sleep Mode) *
9
CC
CC
CC
CC
CC
, OE, RESET Inputs Leakage
CC
Active Current *
Active Current *
Current (Standby)
Current (Standby, Reset)
Current
CC
active while Embedded Algorithm (program or erase) is in progress.
CC
Lock-Out Voltage
current listed includes both the DC operating current and the frequency dependent component.
Parameter
1
2
9
, OE, RESET) *
CC
3
applying.
4
Symbol
Retired Product DS05-20894-5E_July 31, 2007
V
V
V
V
I
I
I
I
I
I
V
V
V
V
I
I
CC1
CC2
CC3
CC4
CC5
ACC
I
LO
LIT
ACC
OH1
OH2
LKO
LI
OL
IH
ID
80/90/10
IL
V
V
V
A
CE = V
CE = V
CE = V
V
RESET = V
V
0.3 V, RESET = V
V
RESET = V
V
V
WP/ACC = V
I
I
I
f = 5 MHz
f = 1 MHz
OL
OH
OH
IN
OUT
CC
9
CC
CC
CC
IN
CC
, OE, RESET = 12.5 V
= 4.0 mA, V
= −2.0 mA, V
= −100 μA
= V
= V
= V
= V
= V
= V
= V
= V
SS
CC
IL
IL
IL
CC
CC
CC
CC
CC
, OE = V
, OE = V
, OE = V
SS
to V
± 0.3 V or V
Max,
Max, CE = V
Max, WE/ACC = V
Max, CE = V
Max,
Conditions
to V
CC
CC
ACC
CC
± 0.3 V
± 0.3 V
CC
CC
, V
CC
Max
, V
IH
IH
IH
= V
CC
,
,
SS
= V
CC
= V
CC
± 0.3 V
SS
= V
CC
CC
SS
Min
± 0.3 V
CC
Min
± 0.3 V,
± 0.3 V,
CC
Max
Word
Word
Byte
Byte
Max
CC
±
V
CC
− 0.5
−1.0
−1.0
11.5
11.5
Min
2.0
2.4
2.3
− 0.4
V
CC
+1.0
+1.0
+ 0.6
12.5
12.5
0.45
Max
2.5
35
16
18
40
20
7
7
5
5
5
+ 0.3
Unit
mA
mA
mA
mA
μA
μA
μA
μA
μA
μA
V
V
V
V
V
V
V
V

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