MBM29LV320TE80TN Meet Spansion Inc., MBM29LV320TE80TN Datasheet - Page 41

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MBM29LV320TE80TN

Manufacturer Part Number
MBM29LV320TE80TN
Description
Flash Memory Cmos 32 M 4 M ? 8/2 M ? 16 Bit
Manufacturer
Meet Spansion Inc.
Datasheet
■ AC CHARACTERISTICS
* : Test Conditions :
Read Cycle Time
Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
RESET Pin Low to Read Mode
CE to BYTE Switching Low or High
• Read Only Operations Characteristics
Output Load : 1 TTL gate and 30 pF (MBM29LV320TE80, MBM29LV320BE80)
Input rise and fall times : 5 ns
Input pulse levels : 0.0 V or 3.0 V
Timing measurement reference level
Notes : C
Input : 1.5 V
Output : 1.5 V
C
L
L
Parameter
= 100 pF including jig capacitance (MBM29LV320TE90/10, MBM29LV320BE90/10)
= 30 pF including jig capacitance (MBM29LV320TE80, MBM29LV320BE80)
Device
Under
Test
100 pF (MBM29LV320TE90/10, MBM29LV320BE90/10)
JEDEC Standard
C
t
t
t
t
t
t
t
L
AVQV
GLQV
EHQZ
GHQZ
AXQX
Retired Product DS05-20894-5E_July 31, 2007
ELQV
AVAV
Symbol
Test Conditions
t
t
READY
t
t
ELFH
t
t
t
t
ELFL
t
t
ACC
Diode = 1N3064
or Equivalent
OH
RC
CE
OE
DF
DF
6.2 kΩ
MBM29LV320TE/BE
CE = V
OE = V
OE = V
Condi-
tion
3.3 V
IL
IL
IL
2.7 kΩ
Min
80
0
80*
Diode = 1N3064
or Equivalent
Max
80
80
30
25
25
20
5
Min
90
0
Value
90*
Max Min Max
90
90
35
30
30
20
5
100
0
10*
80/90/10
100
100
35
30
30
20
5
Unit
μs
ns
ns
ns
ns
ns
ns
ns
ns
41

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