MBM29LV320TE80TN Meet Spansion Inc., MBM29LV320TE80TN Datasheet - Page 44

• Manufacturer Part Number: MBM29LV320TE80TN
• Description: Flash Memory Cmos 32 M 4 M ? 8/2 M ? 16 Bit
• Manufacturer: Meet Spansion Inc.

44
MBM29LV320TE/BE
■ ERASE AND PROGRAMMING PERFORMANCE
■ TSOP (1) PIN CAPACITANCE
Notes : • Test conditions T
■ FBGA PIN CAPACITANCE
Notes : • Test conditions T
Sector Erase Time
Word Programming Time
Byte Programming Time
Chip Programming Time
Program/Erase Cycle
Input Capacitance
Output Capacitance
Control Pin Capacitance
WP/ACC Pin Capacitance
Input Capacitance
Output Capacitance
Control Pin Capacitance
WP/ACC Pin Capacitance
• DQ
• DQ
Parameter
Parameter
Parameter
15
15
/A
/A
-1
-1
pin capacitance is stipulated by output capacitance.
pin capacitance is stipulated by output capacitance.
A
A
= + 25 °C, f = 1.0 MHz
= + 25 °C, f = 1.0 MHz
C
C
C
C
C
C
C
C
100,000
IN
OUT
IN2
IN3
IN
OUT
IN2
IN3
Min
Symbol
Symbol
⎯
⎯
⎯
⎯
Retired Product DS05-20894-5E_July 31, 2007
80/90/10
Limits
Typ
V
V
V
V
V
V
V
V
16
⎯
⎯
1
8
IN
OUT
IN
IN
IN
OUT
IN
IN
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
Condition
Condition
Max
360
300
100
10
⎯
cycle
Unit
μs
μs
s
s
15.0
15.0
Typ
Typ
6.0
8.5
8.0
6.0
8.5
8.0
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
Value
Value
Comments
Max
12.0
10.0
20.0
Max
12.0
10.0
20.0
7.5
7.5
⎯
Unit
Unit
pF
pF
pF
pF
pF
pF
pF
pF