MBM29PL3200BE Fujitsu Microelectronics, Inc., MBM29PL3200BE Datasheet

Page 1

FUJITSU SEMICONDUCTOR DATA SHEET PAGE MODE FLASH MEMORY CMOS MBM29PL3200TE/BE DESCRIPTION The MBM29PL3200TE/ M-bit, 3.0 V-only Page mode Flash memory organized words of 16 bits each words of ...

Page 2

MBM29PL3200TE/BE (Continued) The device provides truly high performance non-volatile Flash memory solution. The device offers fast page access times and 35 ns with random access times and 90 ns, allowing operation of high-speed microprocessors ...

Page 3

Boot Code Sector Architecture T Top sector B Bottom sector • Embedded Erase TM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded Program TM Algorithms Automatically programs and verifies data at specified address • Data ...

Page 4

MBM29PL3200TE/BE PIN ASSIGNMENTS N.C. N.C. N.C. N.C. N. ...

Page 5

N. N.C. ACC MBM29PL3200TE/BE FBGA (TOP VIEW) ...

Page 6

MBM29PL3200TE/BE PIN DESCRIPTIONS Table 1 MBM29PL3200TE/BE Pin Configuration Pin Name Address Input Data Input/Output Chip Enable OE Output Enable WE Write Enable DW/W Selects 32-bit or ...

Page 7

LOGIC SYMBOL 20 MBM29PL3200TE/ DW/W 70/90 7 ...

Page 8

MBM29PL3200TE/BE DEVICE BUS OPERATION Table 2 MBM29PL3200TE/BE User Bus Operations (DW/W Operation 1 Auto-Select Manufacturer Code * Auto-Select Device Code * 1 Extended Auto-Select Device Code * 3 Read * Standby Output Disable Write (Program/Erase) Enable Sector Protection * 2, ...

Page 9

Table 4 MBM29PL3200TE/BE Command Definitions Bus First Bus Command Write Write Cycle Sequence Cycles Req’d Addr. DW Read/Reset 1 XXXh F0h W DW 555h Read/Reset 3 W AAAh DW 555h Autoselect 3 W AAAh DW 555h Program 4 W AAAh ...

Page 10

MBM29PL3200TE/BE (Continued Double Word W : Word *1: This command is valid while Fast Mode. *2: The valid addresses are *3: This command is valid while Hi-ROM mode. *4: The data “00h” is also ...

Page 11

Table 5.1 MBM29PL3200TE Sector Protection Verify Autoselect Codes Type Manufacture’s Code X Word Device Code X Double Word Word X Double Word Extended Device Code Word X Double Word Sector Sector Protection Addresses Temporary Sector X ...

Page 12

MBM29PL3200TE/BE Type Code Manufacturer’s 04h Code 227Eh A- HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z (W) 1 Device 2222 Code 0 0 (DW) 227Eh 2203h ...

Page 13

... Table 5.3 MBM29PL3200BE Sector Protection Verify Autoselect Codes Type Manufacture’s Code X Word Device Code X Double Word Word X Double Word Extended Device Code Word X Double Word Sector Sector Protection Addresses Temporary Sector X Unprotection * for Word mode. In double word mode “ ...

Page 14

MBM29PL3200TE/BE Type Code Manufacturer’s 04h Code 227Eh A- HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z (W) 1 Device 2222 Code 0 0 (DW) 227Eh 2203h ...

Page 15

Table 7 Sector Address (MBM29PL3200TE) Sector Address Sector SA0 SA1 SA2 SA3 ...

Page 16

... SA16 SA17 SA18 Note : The address range The address range 70/90 Table 8 Sector Address (MBM29PL3200BE) Sector Size (Kwords/ ( 16) Address Range ( Double kwords 16/8 000000h to 003FFFh 8/4 004000h to 005FFFh 0 1 ...

Page 17

Table 9 Common Flash Memory Interface Code Description 10h 0051h Query-unique ASCII string 11h 0052h “QRY” 12h 0059h 13h 0002h Primary OEM Command Set 14h 0000h 2h : AMD/FJ standard ...

Page 18

... ACC (Acceleration) Supply Minimum 4Dh 00B5h 00h Not Supported, D7 D3-0 : 100 mV ACC (Acceleration) Supply Maximum 4Eh 00C5h 00h Not Supported, D7 D3-0 : 100 mV Boot Type 4Fh 00XXh 02h MBM29PL3200BE 03h MBM29PL3200TE Note : “0000h” 70/90 Description ...

Page 19

FUNCTIONAL DESCRIPTION Read Mode The device has two control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for device selection the output control and ...

Page 20

MBM29PL3200TE/BE To activate this mode, the programming equipment must force V then be sequenced from the device outputs by toggling address A DON’T CAREs except The manufacturer and device codes may also be ...

Page 21

... word sector independently of whether this sector was protected or unprotected using the method described in “Sector Protection/Unprotection”. The outermost 16 K word sector is the highest addresses in MBM29PL3200TE, or the lowest addresses in MBM29PL3200BE. (MBM29PL3200TE : SA18, MBM29PL3200BE : SA0) If the system asserts V on the WP pin, the device reverts to whether the outermost 16 K word sector was last IL set to be protected or unprotected ...

Page 22

MBM29PL3200TE/BE COMMAND DEFINITIONS The device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in an improper sequence will reset the device to the read mode. ...

Page 23

Any commands written to the chip during this period will be ignored. Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be programmed back to a “1”. Attempting may either ...

Page 24

MBM29PL3200TE/BE Erase Suspend/Resume The Erase Suspend/Resume command allows the user to interrupt a Sector Erase operation and then perform data reads from or programs to a sector not being erased. Erase suspend command is applicable ONLY during the Sector Erase ...

Page 25

Extended Command (1) Fast Mode The device has a Fast Mode function. This mode dispenses with the initial two unlock cycles required in the standard program command sequence by writing a Fast Mode command into the command register. In this ...

Page 26

MBM29PL3200TE/BE Hidden ROM (Hi-ROM) Region The Hi-ROM feature provides a Flash memory region that the system may access through a new command sequence. This is primarily intended for customers who wish to use an Electronic Serial Number (ESN) in the ...

Page 27

Write Operation Status Detailed in Table 10 are all the status flags that can be used to check the status of the device for current mode operation. During sector erase, the part provides the status flags automatically to the I/O ...

Page 28

MBM29PL3200TE/ Data Polling The device features Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm an attempt to read the device will produce ...

Page 29

DQ 5 Exceeded Timing Limits DQ will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under 5 these conditions DQ will produce a “1”. This is a failure condition which indicates that the ...

Page 30

MBM29PL3200TE/BE Reading Toggle Bits DQ / Whenever the system initially begins reading toggle bit status, it must read DQ determine whether a toggle bit is toggling. Typically, a system would note and store the value of the toggle ...

Page 31

Low V Write Inhibit CC To avoid initiation of a write cycle during V than V (Min.). If V < the command register is disabled and all internal program/erase circuits are LKO CC LKO disabled. Under this condition, ...

Page 32

MBM29PL3200TE/BE ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Ambient Temperature with Power Applied Voltage with Respect to Ground All pins except A OE, and ACC * 1 Power Supply Voltage * OE, and ACC * 2 9 *1: ...

Page 33

MAXIMUM OVERSHOOT/UNDERSHOOT 0.6 V 0.5 V 2.0 V Figure 1 Maximum Undershoot Waveform 2.0 V Figure 2 Maximum Overshoot Waveform 1 14 Note This waveform ...

Page 34

MBM29PL3200TE/BE ELECTRICAL CHARACTERISTICS 1. DC Characteristics Parameter Input Leakage Current (except WP, ACC) Output Leakage Current (except WP, ACC) Input Leakage Current (WP, ACC) Output Leakage Current (WP, ACC OE, ACC Inputs Leakage 9 Current V Active Current ...

Page 35

AC Characteristics (1) Read Only Operations Characteristics Parameter Read Cycle Time Address to Output Delay Page Read Cycle Time Page Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output HIGH-Z ...

Page 36

MBM29PL3200TE/BE (2) Write (Erase/Program) Operations Symbol JEDEC Standard t t Write Cycle Time AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH Data Hold ...

Page 37

Test Conditions : Output Load : 1 TTL gate and 50 pF Input rise and fall times : 5 ns Input pulse levels : 0 3.0 V Timing measurement reference level Input : 1.5 V Output : ...

Page 38

MBM29PL3200TE/BE ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Double Word Programming Time Chip Programming Time Erase/Program Cycle PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance Note : Test conditions FBGA ...

Page 39

SWITCHING WAVEFORMS • Key to Switching Waveforms WAVEFORM Address OEH WE HIGH-Z Outputs Figure 5.1 Read Operation Timing Diagram MBM29PL3200TE/BE INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Change from ...

Page 40

MBM29PL3200TE/ Output Figure 5.2 Page Read Operation Timing Diagram 40 70/90 Same page Address PRC t ACC t CE ...

Page 41

Bus Cycle 555h PA Address WPH t GHWL A0h PD Data Notes : 1.PA is address of the memory location ...

Page 42

MBM29PL3200TE/BE Address Data Notes : 1.PA is address of the memory location to be programmed. 2.PD is data to be programmed at word address. 3.DQ is the output of the complement of the data written to the ...

Page 43

Address WPH t GHWL AAh Data t VCS V CC Note : 1.SA is the sector address for Sector Erase. ...

Page 44

MBM29PL3200TE/ Data Data Valid Data (The device has completed the Embedded operation) 7 Figure 9 Data Polling during Embedded Algorithm Operation Timing Diagram 44 70/ ...

Page 45

CE t OEH WE t OES Data ( Stops toggling. (The device has completed the Embedded operation.) 6 Figure 10 Toggle Bit I during Embedded Algorithm ...

Page 46

MBM29PL3200TE/ ELFH Figure 12 Double Word Mode Configuration Timing Diagram CE DW/W t ELFL Figure 13 Word Mode Configuration ...

Page 47

SAX VLHT ...

Page 48

MBM29PL3200TE/ VACCR t VCS V ACC V IH ACC CE WE Figure 16 Accelerated Program Timing Diagram 48 70/90 t Program or Erase Command Sequence VLHT Acceleration period t VLHT t VLHT ...

Page 49

EMBEDDED ALGORITHM Increment Address Program Command Sequence* (Address/Command The sequence is applied for The addresses differ from Figure 17 Embedded Program MBM29PL3200TE/BE Start Write Program Command Sequence (See Below) Data Polling Device Embedded Program Algorithm No in progress ...

Page 50

MBM29PL3200TE/BE EMBEDDED ALGORITHM Chip Erase Command Sequence* (Address/Command The sequence is applied for The addresses differ from 50 70/90 Start Write Erase Command Sequence (See Below) Data Polling or Toggle Bit from Device Embedded Erase Algorithm No in ...

Page 51

Read Byte (DQ Addr Read Byte (DQ Addr should be rechecked even Figure 19 Data Polling Algorithm MBM29PL3200TE/BE VA Address for programming Start Any of the sector addresses ...

Page 52

MBM29PL3200TE/BE Notes : 1.Read toggle bit twice to determine whether or not it is toggling. 2.Recheck toggle bit because it may stop toggling 70/90 Start Read ( Addr. "H" or "L" Read ...

Page 53

Increment PLSCNT No PLSCNT 25? Yes Remove V from A ID Write Reset Command Device Failed * : word mode Figure 21 Sector Protection Algorithm MBM29PL3200TE/BE Start Setup Sector Group Addr ...

Page 54

MBM29PL3200TE/BE Notes : 1.All protected sectors are unprotected. 2.All previously protected sectors are protected once again. Figure 22 Temporary Sector Unprotection Algorithm 54 70/90 Start Temporary Unprotect Enable Command Write (Note 1) Perform Erase or Program Operations Temporary Unprotect Disable ...

Page 55

FAST MODE ALGORITHM Increment Address Notes 1 : The sequence is applied for 2 : The addresses differ from Figure 23 Embedded Programming Algorithm for Fast Mode MBM29PL3200TE/BE Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling Device No ...

Page 56

MBM29PL3200TE/BE ORDERING INFORMATION Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29PL3200 T E DEVICE NUMBER/DESCRIPTION MBM29PL3200 32 Mega-bit (2 M 3.0 V-only Read, Write, and Erase Valid Combinations ...

Page 57

PACKAGE DIMENSIONS 90-pin plastic SSOP (FPT-90P-M01) 23.70±0.30(.933±.012) 90 INDEX 1 0.50(.020) 0.22±0.05 (.009±.002) 0.08(.003) 2000 FUJITSU LIMITED F90001S-1c-1 C MBM29PL3200TE/BE 1.80±0.10 (Mounting height) (.071±.004) 0.55±0.10 (Stand off) (.022±.004) 46 "A" 16.00±0.30 (.630±.012) 13.30±0.20 (.524±.008) Details of "A" part 45 +0.05 ...

Page 58

MBM29PL3200TE/BE (Continued) 84-ball plastic FBGA (BGA-84P-M01) 11.00±0.10(.433±.004) INDEX-MARK AREA 0.10(.004) 2000 FUJITSU LIMITED B84001S-1c 70/90 +0.15 1.05 –0.10 (Mounting height) +.006 .041 –.004 0.38±0.10 (Stand off) (.015±.004) 8.00±0.10 6.40(.252) (.315±.004) REF 7.20(.283)REF 0.80(.031) TYP ...

Page 59

... Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS, INC. 3545 North First Street, San Jose, CA 95134-1804, U.S.A. Tel: +1-408-922-9000 Fax: +1-408-922-9179 Customer Response Center Mon. - Fri (PST) ...