MBM29PL3200BE Fujitsu Microelectronics, Inc., MBM29PL3200BE Datasheet - Page 23

• Manufacturer Part Number: MBM29PL3200BE
• Description: Page Mode Flash Memory 32 M 2 M X 16/1 M X 32 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

Chip Erase
Sector Erase
Any commands written to the chip during this period will be ignored.
Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be
programmed back to a “1”. Attempting to do so may either hang up the device or result in an apparent success
according to the data polling algorithm but a read from Read/Reset mode will show that the data is still “0”. Only
erase operations can convert “0”s to “1”s.
Figure 17 illustrates the Embedded Program
Chip erase is a six-bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the chip erase command.
Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase
Algorithm command sequence, the device will automatically program and verify the entire memory for an all-
zero data pattern prior to electrical erase (Preprogram Function). The system is not required to provide any
controls or timings during these operations.
The system can determine the status of the erase operation by using DQ
The chip erase begins on the rising edge of the last CE or WE, whichever happens first in the command sequence
and terminates when the data on DQ
returns to the read mode.
Chip Erase Time
Figure 18 illustrates the Embedded Erase
Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector
address (any address location within the desired sector) is latched on the falling edge of CE or WE, whichever
happens later, while the command (Data
After time-out of “t
Multiple sectors may be erased concurrently by writing the six bus cycle operations on Table 4. This sequence
is followed with writes of the Sector Erase command (30h) to addresses in other sectors desired to be concurrently
erased. The time between writes must be less than “t
will not start. It is recommended that processor interrupts be disabled during this time to guarantee this condition.
The interrupts can be re-enabled after the last Sector Erase command is written. A time-out of “t
rising edge of last CE or WE, whichever happens first, will initiate the execution of the Sector Erase command
(s). If another falling edge of CE or WE, whichever happens first, occurs within the “t
timer is reset. (Monitor DQ
Erase Timer.) Any command other than Sector Erase or Erase Suspend during this time-out period will reset
the device to the read mode, ignoring the previous command string. In that case, restart the erase on those
sectors and allow them to complete. (Refer to Write Operation Status section for Sector Erase Timer operation.)
Loading the sector erase buffer may be done in any sequence and with any number of sectors (0 to 19).
Sector erase does not require the user to program the device prior to erase. The device automatically programs
all memory locations in the sector (s) to be erased prior to electrical erase (Preprogram function). When erasing
a sector or sectors, the remaining unselected sectors are not affected. The system is not required to provide
any controls or timings during these operations.
The system can determine the status of the erase operation by using DQ
The sector erase begins after the “t
the last sector erase command pulse and terminates when the data on DQ
section), at which time the device returns to the read mode. Data polling and Toggle Bit must be performed at
an address within any of the sectors being erased.
Multiple Sector Erase Time
Sector Erase.
TOW
Sector Erase Time
” from the rising edge of the last sector erase command, the sector erase operation will begin.
3
to determine if the sector erase timer window is still open; see section DQ
[Sector Erase Time
TOW
7
” time out from the rising edge of CE or WE, whichever happens first ,for
is “1” (See Write Operation Status section), at which time the device
All sectors
TM
30h) is latched on the rising edge of CE or WE, which happens first.
Algorithm using typical command strings and bus operations.
TM
Algorithm using typical command strings and bus operations.
Chip Program Time (Preprogramming)
Sector Program Time (Preprogramming)]
TOW
MBM29PL3200TE/BE
”, or that command will not be accepted and erasure
7
7
(Data Polling) or DQ
7
(Data Polling), or DQ
is “1” (See Write Operation Status
TOW
” time-out window, the
6
6
(Toggle Bit).
TOW
(Toggle Bit).
Number of
” from the
3
, Sector
70/90
23