MBM29PL3200BE Fujitsu Microelectronics, Inc., MBM29PL3200BE Datasheet - Page 35

• Manufacturer Part Number: MBM29PL3200BE
• Description: Page Mode Flash Memory 32 M 2 M X 16/1 M X 32 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

2. AC Characteristics
(1) Read Only Operations Characteristics
Read Cycle Time
Address to Output Delay
Page Read Cycle Time
Page Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output HIGH-Z
Output Enable to Output HIGH-Z
Output Hold Time From Address,
CE or OE, Whichever Occurs First
CE or DW/W Switching Low or High
*1: Test Conditions :
Output Load : 1 TTL gate and 50 pF
Input rise and fall times : 5 ns
Input pulse levels : 0.0 V to 3.0 V
Timing measurement reference level
Input : 1.5 V
Output : 1.5 V
Parameter
Device
Under
Test
C
L
JEDEC
Figure 4 Test Conditions
t
t
t
t
t
t
t
AVQV
GLQV
EHQZ
GHQZ
AXQX
AVAV
ELQV
Symbol
Standard
t
t
t
t
t
IN3064
or Equivalent
PACC
ELFH
t
t
t
t
ELFL
ACC
PRC
t
t
RC
OE
OH
CE
DF
DF
6.2 k
*2 Test Conditions :
MBM29PL3200TE/BE
Output Load : 1 TTL gate and 100 pF
Input rise and fall times : 5 ns
Input pulse levels : 0.0 V to 3.0 V
Timing measurement reference level
Condition
3.3 V
OE
OE
OE
CE
CE
Input : 1.5 V
Output : 1.5 V
2.7 k
V
V
V
V
V
IL
IL
IL
IL
IL
Diodes
or Equivalent
Min. Max. Min. Max.
70
25
4
70 *
IN3064
1
70
25
70
25
25
25
5
Value
90
35
5
90 *
2
90
35
90
35
30
30
5
Unit
70/90
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
35