MBM29PL3200BE Fujitsu Microelectronics, Inc., MBM29PL3200BE Datasheet - Page 25

• Manufacturer Part Number: MBM29PL3200BE
• Description: Page Mode Flash Memory 32 M 2 M X 16/1 M X 32 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

Extended Command
(1) Fast Mode
(2) Fast Programming
(3) CFI (Common Flash Memory Interface)
The device has a Fast Mode function. This mode dispenses with the initial two unlock cycles required in the
standard program command sequence by writing a Fast Mode command into the command register. In this
mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program
command. (Do not write erase command in this mode.) The read operation is also executed after exiting this
mode. To exit this mode, it is necessary to write a Fast Mode Reset command into the command register. (Refer
to Figure 23.) The V
In Fast Mode, the programming can be executed with two bus cycle operation. The Embedded Program Algorithm
is executed by writing a program set-up command (A0h) and data write cycles (PA/PD). (Refer to Figure 23.)
The CFI (Common Flash Memory Interface) specification outlines the device and host system software interro-
gation handshake which allows specific vendor-specified software algorithms to be used for entire families of
the device. This allows device-independent, JEDEC ID-independent, and forward-and backward-compatible
software support for the specified flash device families. Refer to CFI specification in detail.
The operation is initiated by writing the query command (98h) into the command register. Following the command
write, a read cycle from specific address retrieves device information. Please note that output data of upper byte
(DQ
to write the Read/Reset command sequence into the register.
15
to DQ
8
) is “0” in word mode (16 bit) read. Refer to the CFI code table. To terminate operation, it is necessary
CC
active current is required even if CE
MBM29PL3200TE/BE
V
IH
during Fast Mode.
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