MBM29PL3200BE Fujitsu Microelectronics, Inc., MBM29PL3200BE Datasheet - Page 31

• Manufacturer Part Number: MBM29PL3200BE
• Description: Page Mode Flash Memory 32 M 2 M X 16/1 M X 32 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

Low V
Write Pulse “Glitch” Protection
Logical Inhibit
Power-up Write Inhibit
To avoid initiation of a write cycle during V
than V
disabled. Under this condition, the device will reset to the read mode. Subsequent writes will be ignored until
the V
to prevent unintentional writes when V
If the Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector (s) can not be used.
Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle.
Writing is inhibited by holding any one of OE
must be “L” while OE is a logical one.
Power-up of the device with WE
The internal state machine is automatically reset to read mode on power-up.
CC
CC
Write Inhibit
LKO
level is greater than V
(Min.). If V
CC
< V
LKO
LKO
, the command register is disabled and all internal program/erase circuits are
. It is the user’s responsibility to ensure that the control pins are logically correct
CE
CC
V
is above V
CC
IL
and OE
power-up and power-down, a write cycle is locked out for V
V
IL
, CE
LKO
V
(Min.).
IH
MBM29PL3200TE/BE
V
will not accept commands on the rising edge of WE.
IH
, or WE
V
IH
. To initiate a write cycle, CE and WE
CC
70/90
less
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