MBM30LV0128 Fujitsu Microelectronics, Inc., MBM30LV0128 Datasheet - Page 11

• Manufacturer Part Number: MBM30LV0128
• Description: Flash Memory 128 M 16 M X 8 Bit Nand-type
• Manufacturer: Fujitsu Microelectronics, Inc.

Read (3) : 50h
Sequential Read
The Read (3) mode has identical timing to that of Read (1) and (2) . However, while Read (1) and (2) are used
to access the array, Read (3) is used to access the 16 byte spare area. When the 50h command is executed,
the pointer will be set to an address space between columns 512 and 527. The values of Y will complete the
address decoding. During this operation, only address bits A
address; A
Each RE pulse used to output data from the data register will cause the column address pointer to increment
by one. When the final column has been reached, the next page will be automatically loaded into the data register.
The R/B signal may be used to monitor the completion of the data transfer.
I/O0 to I/O7
R/B
7
to A
CLE
ALE
I/O0
to I/O7
WE
CE
RE
R/B
4
0
0
are ignored. A
00h, SE
255
Page (Row)
Command
00h/01h/50h
Address
511 527
L
23
to A
Figure 3 Read Mode (3) Operation
50h
X
Address Input
0
9
Figure 4 Sequential Read
are used to determine the starting row address.
01h, SE
0
255
Starting Address
Y
511 527
L
255
X
Data
X
0
511 527
3
to A
Y
00h, SE
255
(Column Address)
Data
0
are used to determine the starting column
511 527
H
Data Output
MBM30LV0128
0
50h, SE
255
Data
511 527
L
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