MBM30LV0128 Fujitsu Microelectronics, Inc., MBM30LV0128 Datasheet - Page 8

• Manufacturer Part Number: MBM30LV0128
• Description: Flash Memory 128 M 16 M X 8 Bit Nand-type
• Manufacturer: Fujitsu Microelectronics, Inc.

8
MBM30LV0128
*1: H : V
*2: WP should be biased to CMOS high or CMOS low for standby.
*3: When SE is high, spare area is deselected.
*4: If 50h command is input and read/program operation is executed only for spare area, SE must be low at the
*: H : V
Read
Mode
During Read (Busy)
Sequential Read & Data Output
Program/
Erase
Mode
Data Input
During Program (Busy)
During Erase (Busy)
Write Protect
Stand-by
Output Select
Output Deselect
Standby
DEVICE BUS OPERATIONS
command/address input.
Operation
IH
IH
, L : V
, L : V
Command Input
Address Input (3 clocks)
Command Input
Address Input (2 or 3 clocks)
IL
IL
, X : V
, X : V
Mode
IH
IH
or V
or V
CLE
IL
IL
L
L
X
Table 3 Read Mode Operation Status *
ALE
X
L
L
Table 2 Operation Table *
CLE
H
H
L
L
L
L
L
X
X
X
X
CE
H
L
L
ALE
H
H
X
X
X
X
L
L
L
L
L
WE
H
H
X
CE
H
X
X
X
L
L
L
L
L
L
L
1
RE
H
X
L
WE
H
H
X
X
X
X
High Impedance
High Impedance
Data Output
I/O0 to I/O7
RE
H
H
H
H
H
H
X
X
X
X
0 V/V
L/H *
L/H *
L/H *
L/H *
X *
X *
X *
X *
SE
X
X
Power Supply
CC
4
4
4
4
3
3
3
3
Standby
*
Active
Active
2
0 V/V
WP
H
H
H
H
H
X
X
X
X
L
CC
*
2