MBM30LV0128 Fujitsu Microelectronics, Inc., MBM30LV0128 Datasheet - Page 36

• Manufacturer Part Number: MBM30LV0128
• Description: Flash Memory 128 M 16 M X 8 Bit Nand-type
• Manufacturer: Fujitsu Microelectronics, Inc.

36
MBM30LV0128
(14) CE “don’t care” timing for read and program operation
CE can be “don’t-care” (“H” or “L”) state during read and program operation as follows.
I/O0
to I/O7
I/O0
<Program Operation>
to I/O7
<Read Operation>
CE
WE
RE
WE
CE
R/B
Note : In the read operation, the CE signal must stay “Low” after the third address input and during
I/O0
to I/O7
CE
RE
Busy state. If the CE signal goes High during this period, the read operation will be
terminated and then the standby mode will be entered.
Command
80h
(55 ns (Max.))
t
CEA
t
REA
A
A
A
0
A
0
7
to
7
to
D
A
A
OUT
9
16
to
A
A
9
16
A
to
A
17
23
to
A
A
17
23
to
D
0
IN
D
1
IN
CE
WE
D
OUT
D
N
2
IN
N
D
OUT
D
1
*
t
IN
CS
D
N
OUT
10h
2
t
WP
t
CH
V
D
D
IH
OUT
or V
IL