MBM30LV0128 Fujitsu Microelectronics, Inc., MBM30LV0128 Datasheet - Page 2

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MBM30LV0128

Manufacturer Part Number
MBM30LV0128
Description
Flash Memory 128 M 16 M X 8 Bit Nand-type
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
2
MBM30LV0128
FEATURES
• 3.3 V-only operating voltage (2.7 V to 3.6 V)
• Organization
• Automatic Program and Erase
• 528 Byte Page Read Operation
• Fast Program and Erase
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
• 1,000,000 write/erase cycles guaranteed (ECC system required)
• Command Register Operation
• Package
• Data Retention : 10 years
PACKAGES
Minimizes system level power requirements
Memory Cell Array : (16 M
Data Register
Page Program : (512
Block Erase
Random Access : 10 s (Max.)
Serial Access
Program Time
Block Erase Time : 2 ms (Typ.)
48-pin TSOP Type I (0.5 mm pitch)
Normal/Reverse Type
: (16 K
: 35 ns (Max.)
: 200 s (Typ.)
(FPT-48P-M19)
(Normal Bend)
: (512
16) Byte
512) Byte
16)
512 K)
block
8 bit
page
48-pin plastic TSOP (II)
8 bit
(FPT-48P-M20)
(Reverse Bend)

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