MT54V1MH18E Micron Semiconductor Products, Inc., MT54V1MH18E Datasheet - Page 25

• Manufacturer Part Number: MT54V1MH18E
• Description: 18Mb QDR SRAM, 2.5V Vdd, Hstl, 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Document Revision History
Rev. F, Pub 3/03 ................................................................................................................................................................3/03
Rev. E, Pub 2/03 ...............................................................................................................................................................2/03
Rev. D, Pub 6/02...............................................................................................................................................................6/02
Rev. C, Pub. 5/02, ADVANCE...........................................................................................................................................5/02
Rev. B, Pub. 5/02, ADVANCE...........................................................................................................................................8/02
Rev. A, Pub. 4/02, ADVANCE...........................................................................................................................................4/02
18Mb: 2.5V V
MT54V1MH18E_16_F.fm – Rev. F, Pub. 3/03
• Updated JTAG Section
• Removed Preliminary Status
• Added definitive notes to Figure 3
• Added definitive note to Table 9
• Updated Truth Table for clarity
• Added 1.5V references
• Update READ/WRITE Timing Diagram
• Updated JTAG section to reflect 1149.1 specification compliance with EXTEST features
• Updated JTAG description to reflect 1149.1 specification compliance with EXTEST feature
• Added definitive note concerning SRAM (DQ) I/O balls used for JTAG DC values and timing
• Changed process information in header to die revision indicator
• Updated Thermal Resistance Values to Table 12:
• Updated Thermal Resistance values to Table 12:
• Added T
• Modified Figure 2 regarding depth, configuration, and byte controls
• Added definitive notes regarding I/O behavior during JTAG operation
• Added definitive notes regarding I
• Removed note regarding AC derating information for full I/O range
• Remove references to JTAG scan chain logic levels being at logic zero for NC pins in Tables 5 and 19
• Revised ball description for NC balls:
• Removed ADVANCE designation
• Added CQ, CQ# to Ball Description table on page 5
• Added note 10 on page 8
• Deleted note 6 on page 9
• Revised note 5 on page 10
• Added “t” and description to Device ID code
• Deleted Boundary Scan (Exit) Order note on page 20
• Fixed voltage range error in AC Electrical Characteristics and Operating Conditions table
• Updated DC Electrical Characteristics and Operating Conditions table
• Added AC Electrical Characteristics and Operating Conditions table
• New ADVANCE data sheet
C
C
C
J
J
J
These balls are internally connected to the die, but have no function and may be left not connected to the
board to minimize ball count.
A
C
B
DD
I
O
CK
, HSTL, QDRb4 SRAM
= 19.4 TYP
= 1.0 TYP
= 9.6 TYP
= 4.5 TYP; 5.5 MAX
= 6 TYP; 7 MAX
= 5.5 TYP; 6.5 MAX
J
£ +95°C to Table 13
DD
test conditions for read to write ratio
25
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
1 MEG x 18, 512K x 36
, HSTL, QDRb4 SRAM
©2003 Micron Technology, Inc.