MT54V1MH18E Micron Semiconductor Products, Inc., MT54V1MH18E Datasheet - Page 4

• Manufacturer Part Number: MT54V1MH18E
• Description: 18Mb QDR SRAM, 2.5V Vdd, Hstl, 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 2.5V V
MT54V1MH18E_16_F.fm – Rev. F, Pub. 3/03
1. Figure 2 illustrates simplified device operation. See truth table, ball descriptions, and timing diagrams for detailed
2. For 1 Meg x 18, n = 18, a = 18.
D (Data In)
ADDRESS
information.
For 512K x 36, n = 17, a = 36.
BW0#
BW1#
W#
DD
R#
K#
, HSTL, QDRb4 SRAM
K
K
W#
R#
n
a
REGISTRY
REGISTRY
ADDRESS
& LOGIC
& LOGIC
DATA
2a
2a
n
K
Figure 2: Functional Block Diagram
W
R
T
E
I
R
G
E
2
1 Meg x 18; 512K x 36
W
R
T
E
I
D
R
V
E
R
I
MEMORY
ARRAY
2 n x a
4
N
S
E
S
E
2.5V V
M
A
Micron Technology, Inc., reserves the right to change products or specifications without notice.
P
S
MUX
MUX
DD
1 MEG x 18, 512K x 36
2a
2a
, HSTL, QDRb4 SRAM
C
R
G
A
E
O
K,K#
U
U
T
P
T
C,C#
or
3a
O
U
U
T
P
T
C
S
E
L
E
T
O
U
U
T
P
T
©2003 Micron Technology, Inc.
U
B
E
R
F
F
(Echo Clock Out)
a
(Data Out)
2
CQ, CQ#
Q