MT55L128L18F1 Micron Semiconductor Products, Inc., MT55L128L18F1 Datasheet - Page 14

• Manufacturer Part Number: MT55L128L18F1
• Description: 2Mb ZBT SRAM, 3.3V Vdd, 3.3V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

NOT RECOMENDED FOR NEW DESIGNS
SNOOZE MODE
mode in which the device is deselected and current is
reduced to I
dictated by the length of time the ZZ pin is in a HIGH
state. After the device enters SNOOZE MODE, all in-
puts except ZZ become disabled and all outputs go to
High-Z.
that causes the device to enter SNOOZE MODE. When
SNOOZE MODE ELECTRICAL CHARACTERISTICS
NOTE:
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Flow-Through ZBT SRAM
MT55L128L18F1_C.p65 – Rev. C, Pub. 11/02
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
Outputs (Q)
SNOOZE MODE is a low-current, “power-down”
The ZZ pin is an asynchronous, active HIGH input
ALL INPUTS
(except ZZ)
I
SUPPLY
1. This parameter is sampled.
CLK
ZZ
SB
2
Z
. The duration of SNOOZE MODE is
I ISB2Z
t
ZZI
t
ZZ
SNOOZE MODE WAVEFORM
CONDITIONS
ZZ
V
IH
3.3V I/O, FLOW-THROUGH ZBT SRAM
14
High-Z
the ZZ pin becomes a logic HIGH, I
after the time
tion pending when the device enters SNOOZE MODE
is not guaranteed to complete successfully. Therefore,
SNOOZE MODE must not be initiated until valid pend-
ing operations are completed. Similarly, when exiting
SNOOZE MODE during
READ cycle should be given.
SYMBOL
2Mb: 128K x 18, 64K x 32/36
t
t
I
t
RZZI
t
RZZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SB
ZZI
ZZ
2
Z
t
ZZI is met. Any READ or WRITE opera-
MIN
0
0
0
or READ Only
DESELECT
t
t RZZI
RZZ
t
RZZ, only a DESELECT or
t
t
t
MAX
KHKH
KHKH
KHKH
10
SB
UNITS
2
mA
ns
ns
ns
ns
Z
©2002, Micron Technology, Inc.
DON’T CARE
is guaranteed
NOTES
1
1
1
1