MT55L128L18F1 Micron Semiconductor Products, Inc., MT55L128L18F1 Datasheet - Page 6

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MT55L128L18F1

Manufacturer Part Number
MT55L128L18F1
Description
2Mb ZBT SRAM, 3.3V Vdd, 3.3V I/O, Flow-Through,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet

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Part Number:
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NOT RECOMENDED FOR NEW DESIGNS
PIN DESCRIPTIONS (continued)
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Flow-Through ZBT SRAM
MT55L128L18F1_C.p65 – Rev. C, Pub. 11/02
(a)
15, 16, 41, 65, 91 15, 16, 41, 65, 91
(b)
28–30, 51–53,
68, 69, 72–74
56, 57, 75, 78,
60, 66, 67, 71,
18, 19, 22-24
54, 61, 70, 77
21, 26, 40, 55,
38, 39, 42, 43
1-3, 6, 7, 25,
4, 11, 20, 27,
5, 10, 14, 17,
TQFP (x18)
58, 59, 62, 63,
79, 95, 96
8, 9, 12, 13,
76, 90
83, 84
74
24
88
31
50
TQFP (x32/x36)
56–59, 62, 63
72–75, 78, 79
22–25, 28, 29
21, 26, 40, 55,
60, 66, 67, 71,
54, 61, 70, 77
38, 39, 42, 43
(c)
4, 11, 20, 27,
5, 10, 14, 17,
(b)
(d)
(a)
2, 3, 6–9,
12, 13
76, 90
83, 84
52, 53,
68, 69,
18, 19,
n/a
88
31
51
80
30
50
1
NC/DQPa
NC/DQPb
NC/DQPd
NC/DQPc
SYMBOL
(LBO#)
MODE
NC/SA
R/W#
V
DQb
DQd
DQa
DQc
DNU
V
N C
V
NF
DD
DD
SS
Q
Output pins; Byte “c” is DQc pins; Byte “d” is DQd pins. Input
Supply
Supply
Supply
Input/
TYPE
Input
Input
NC/
I/O
N C
NC
3.3V I/O, FLOW-THROUGH ZBT SRAM
6
ADV/LD# is LOW and is the only means for determining
READs and WRITEs. READ cycles may not be converted
into WRITEs (and vice versa) other than by loading a new
address. A LOW on this pin permits BYTE WRITE opera-
tions and must meet the setup and hold times around the
rising edge of CLK. Full bus-width WRITEs occur if all byte
write enables are LOW.
Mode: This input selects the burst sequence. A LOW on
this pin selects linear burst. NC or HIGH on this pin selects
interleaved burst. Do not alter input state while device is
operating. LBO# is the JEDEC-standard term for MODE.
SRAM Data I/Os: Byte “a” is DQa pins; Byte “b” is DQb
data must meet setup and hold times around the rising
edge of CLK.
No Connect/Data Bits: On the x32 version, these pins
are no connect (NC) and can be left floating or
connected to GND to minimize thermal impedance.
On the x36 version, these bits are DQs.
No Connect: These pins can be left floating or
connected to GND to minimize thermal impedance.
No Connect: NC pin 50 is reserved as an address bit for the
higher-density 4Mb ZBT SRAM. This pin can be left
floating or connected to GND to minimize thermal
impedance.
Power Supply: See DC Electrical Characteristics and
Operating Conditions for range.
Isolated Output Buffer Supply: See DC Electrical
Characteristics and Operating Conditions for range.
Ground: GND.
Do Not Use: These signals may either be unconnected or
wired to GND to minimize thermal impedance.
No Function: These pins are internally connected to the
die and will have the capacitance of an input pin. It is
allowable to leave these pins unconnected or driven by
signals. Pins 83 and 84 are reserved as address bits for the
8Mb and 16Mb ZBT SRAMs.
Read/Write: This input determines the cycle type when
2Mb: 128K x 18, 64K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DESCRIPTION
©2002, Micron Technology, Inc.

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