MT55L128L32F1 Micron Semiconductor Products, Inc., MT55L128L32F1 Datasheet - Page 15

• Manufacturer Part Number: MT55L128L32F1
• Description: 4Mb ZBT SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on V
Relative to V
V
Storage Temperature (plastic) ........... -55°C to +150°C
Junction Temperature** ..................................... +150°C
Short Circuit Output Current .............................. 100mA
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C ≤ T
NOTE: 1. All voltages referenced to V
4Mb: 256K x 18, 128K x 32/36 Flow-Through ZBT SRAM
MT55L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN
IN
DESCRIPTION
Input High (Logic 1) Voltage
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
Relative to V
.................................................. -0.5V to V
2. Overshoot:
3. MODE pin has an internal pull-up, and input leakage = ±10µA.
4. The load used for V
5. V
A
Undershoot:
Power-up:
curves are available upon request.
operation.
≤ +70°C; V
DD
DD
SS
DD
Q should never exceed V
................................................. -0.5V to V
Q Supply
Supply
SS
.................................... -0.5V to +4.6V
DD
V
V
V
, V
IH
IL
IH
≥ -0.7V for t ≤
DD
≤ +4.6V for t ≤
≤ +3.465V and V
OH
Q = +3.3V ±0.165V unless otherwise noted)
, V
OL
testing is shown in Figure 2. AC load current is higher than the shown DC values. AC I/O
SS
DD
(GND).
. V
t
Output(s) disabled,
t
KHKH/2 for I ≤ 20mA
DD
KHKH/2 for I ≤ 20mA
DD
and V
CONDITIONS
0V ≤ V
0V ≤ V
I
≤ 3.135V for t ≤ 200ms
OH
I
OL
DD
DQ pins
= -4.0mA
Q + 0.5V
= 8.0mA
DD
IN
IN
Q can be externally wired together to the same power supply for 3.3V I/O
≤ V
≤ V
DD
DD
DD
15
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Junction temperature depends upon package type,
cycle time, loading, ambient temperature and airflow.
See Micron Technical Note TN-05-14 for more
information.
SYMBOL
4Mb: 256K x 18, 128K x 32/36
V
V
V
V
V
V
V
IL
DD
IL
OH
DD
OL
IH
IH
IL
FLOW-THROUGH ZBT SRAM
O
I
Q
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3.135
3.135
MIN
-0.3
-1.0
-1.0
2.0
2.0
2.4
V
V
DD
DD
MAX
3.465
V
0.8
1.0
1.0
0.4
+ 0.3
+ 0.3
DD
UNITS
µA
µA
V
V
V
V
V
V
V
©2003, Micron Technology, Inc.
NOTES
1, 2
1, 2
1, 2
1, 4
1, 4
1, 5
3
1