MT55L128L32F1 Micron Semiconductor Products, Inc., MT55L128L32F1 Datasheet - Page 22

• Manufacturer Part Number: MT55L128L32F1
• Description: 4Mb ZBT SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

READ/WRITE TIMING PARAMETERS
NOTE: 1. For this waveform, ZZ is tied LOW.
4Mb: 256K x 18, 128K x 32/36 Flow-Through ZBT SRAM
MT55L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN
COMMAND
SYM
t
f
t
t
t
t
t
t
t
t
KHKH
KF
KHKL
KLKH
KHQV
KHQX
KHQX1
KHQZ
GLQV
GLQX
ADDRESS
ADV/LD#
BWx#
R/W#
CKE#
2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BURST operations are optional.
3. CE# represents three signals. When CE# = 0, it represents CE# = 0, CE2# = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most
OE#
CLK
CE#
DQ
MIN
2.5
2.5
3.0
3.0
10
recent data may be from the input data register.
0
-10
t EVKH
t CVKH
t AVKH
MAX
100
7.5
5.0
5.0
WRITE
D(A1)
A1
1
t KHEX
t KHCX
t KHAX
MIN
3.0
3.0
3.0
3.0
t DVKH
11
0
-11
WRITE
D(A1)
D(A2)
A2
2
MAX
t KHKL
t KHDX
8.5
5.0
5.0
90
t KHKH
t KLKH
D(A2+1)
MIN
BURST
WRITE
D(A2)
3.0
3.0
3.0
3.0
12
0
3
-12
MAX
9.0
5.0
5.0
83
READ/WRITE TIMING
D(A2+1)
READ
Q(A3)
A3
4
UNITS
MHz
t KHQV
t KHQX1
ns
ns
ns
ns
ns
ns
ns
ns
ns
22
Q(A4)
READ
Q(A3)
A4
5
t KHQX
SYM
t
t
t
t
t
t
t
t
t
GHQZ
AVKH
EVKH
CVKH
DVKH
KHAX
KHEX
KHCX
KHDX
t GHQZ
4Mb: 256K x 18, 128K x 32/36
Q(A4+1)
BURST
Q(A4)
READ
6
FLOW-THROUGH ZBT SRAM
MIN
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-10
t GLQV
t GLQX
MAX
5.0
Q(A4+1)
WRITE
D(A5)
A5
7
t KHQZ
t KHQX
MIN
DON’T CARE
2.2
2.2
2.2
2.2
0.5
0.5
0.5
0.5
-11
READ
Q(A6)
A6
D(A5)
8
MAX
5.0
MIN
WRITE
2.5
2.5
2.5
2.5
0.5
0.5
0.5
0.5
D(A7)
Q(A6)
A7
9
©2003, Micron Technology, Inc.
-12
UNDEFINED
MAX
5.0
DESELECT
D(A7)
10
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns