MT57V256H36P Micron Semiconductor Products, Inc., MT57V256H36P Datasheet - Page 10

• Manufacturer Part Number: MT57V256H36P
• Description: 9Mb DDR SRAM 2.5V Vdd, HSTL Pipelined
• Manufacturer: Micron Semiconductor Products, Inc.

I
(+20°C
NOTE: 1. I
256K x 36 2.5V V
MT57V256H36P_5.p65 – Rev. 5, Pub. 5/02
DD
DESCRIPTION
Operating Supply
Current: DDR
Standby Supply
Current: NOP
Stop Clock Current
Output Supply
Current: DDR
(For information
only)
OPERATING CONDITIONS AND MAXIMUM LIMITS
2. Typical values are measured at V
3. Operating supply currents and burst mode currents are calculated with 50 percent READ cycles and 50 percent WRITE
4. NOP currents are valid when entering NOP after all pending READ and WRITE cycles are completed.
5. Average I/O current and power is provided for information purposes only and is not tested. Calculation assumes that
DD
T
greater output loading. Typical value is measured at 6ns cycle time.
cycles.
all outputs are loaded with C
equations: Average I/O Power as dissipated by the SRAM is:
P = 0.5 × n × f × C
, HSTL, Pipelined DDR SRAM
DD
J
is specified with no output current and increases with faster cycle times. I
+110°C; V
DD
L
= MAX unless otherwise noted)
× V
DD
Cycle time = 0; Inputs static
Cycle time
All addresses/data static
Q
All inputs
t
KHKH =
2
Device in NOP state;
. Average I
L
Outputs open
CONDITIONS
(in farads), half of outputs toggle at each transition (n = 36), V
C
DD
L
t
= 2.5V, V
= 15pF
KHKH (MIN);
t
DD
V
KHKH (MIN);
IL
Q = n × f × C
or
DD
Q = 1.5V and temperature = 25°C.
V
2.5V V
IH
;
L
10
× V
DD
Q.
DD
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
, HSTL, PIPELINED DDR SRAM
I
I
DD
I
I
SB
DD
SB
Q
1
TBD
TYP
550
150
DD
–
Q increases with faster cycle times and
650
225
75
81
-5
MAX
DD
550
175
75
68
-6
Q = 1.5V and uses the
256K x 36
©2002, Micron Technology, Inc.
UNITS NOTES
mA
mA
mA
mA
1, 2,
2, 4
3
2
5