MT57V256H36P Micron Semiconductor Products, Inc., MT57V256H36P Datasheet - Page 19

• Manufacturer Part Number: MT57V256H36P
• Description: 9Mb DDR SRAM 2.5V Vdd, HSTL Pipelined
• Manufacturer: Micron Semiconductor Products, Inc.

TAP AC TEST CONDITIONS
TAP DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(+20°C
NOTE: 1. All voltages referenced to V
256K x 36 2.5V V
MT57V256H36P_5.p65 – Rev. 5, Pub. 5/02
Input pulse levels ...................................... V
Input rise and fall times ....................................... 1ns
Input timing reference levels ........................... 1.25V
Output reference levels .................................... 1.25V
Test load termination supply voltage .............. 1.25V
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
2. Overshoot:
DD
T
Undershoot: V
Power-up:
During normal operation, V
pulse widths less than
, HSTL, Pipelined DDR SRAM
J
110°C, +2.4V
V
V
IH
IL
IH
(AC)
(AC)
+2.6V and V
V
t
KHKL (MIN) or operate at frequencies exceeding
DD
-0.5V for t
V
DD
SS
DD
+2.6V unless otherwise noted)
+ 1.5V for t
Output(s) disabled,
(GND).
Q must not exceed V
0V
DD
0V
CONDITIONS
|I
I
|I
OHC
OLC
I
OHT
OLT
2.4V and V
t
V
KHKH/2
| = 100µA
= 100µA
SS
V
| = 2mA
IN
= 2mA
IN
to 2.5V
t
KHKH/2
V
V
DD
DD
DD
Q
2.5V V
Q
DD
19
. Control input signals (such as LD#, R/W#, etc.) may not have
1.4V for t
SYMBOL
DD
V
V
V
V
V
IL
V
IL
OH
OH
OL
OL
IH
IL
O
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Tap AC Output Load Equivalent
I
, HSTL, PIPELINED DDR SRAM
1
2
1
2
200ms
TDO
f
KF (MAX).
MIN
-0.3
-5.0
-5.0
1.7
2.1
1.7
Z = 50
O
Figure 4
V
DD
MAX
0.7
5.0
5.0
0.2
0.7
+ 0.3
1.25V
UNITS
256K x 36
µA
µA
©2002, Micron Technology, Inc.
V
V
V
V
V
V
20pF
50
NOTES
1, 2
1, 2
1
1
1
1