MT58L1MY18P Micron Semiconductor Products, Inc., MT58L1MY18P Datasheet - Page 14

• Manufacturer Part Number: MT58L1MY18P
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O; 2.5V Vdd, 2.5V I/O, Pipelined, Scd,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 11: TQFP Capacitance
Note 6; notes appear following parameter tables on page 17
Table 12: FBGA Capacitance
Note 6; notes appear following parameter tables on page 17
Table 13: TQFP Thermal Resistance
Note 6; notes appear following parameter tables on page 17
Table 14: FBGA Thermal Resistance
Note 6; notes appear following parameter tables on page 17
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, SCD SyncBurst SRAM
MT58L1MY18P1_16_D.fm – Rev. D, Pub 2/03
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Input Capacitance
Clock Capacitance
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Input Capacitance
Clock Capacitance
Junction to Ambient
(Airflow of 1m/s, two-layer
board)
Thermal Resistance
Junction to Case (Top)
Junction to Ambient
(Airflow of 1m/s, two-layer
board)
Junction to Case (Top)
Junction to Board (Bottom)
Test conditions follow standard test methods and
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
procedures for measuring thermal impedance,
T
T
A
A
= 25ºC; f = 1 MHz;
= 25ºC; f = 1 MHz;
CONDITIONS
CONDITIONS
per EIA/JESD51.
per EIA/JESD51.
V
V
CONDITIONS
CONDITIONS
DD
DD
= 3.3V
= 3.3V
14
PIPELINED, SCD SYNCBURST SRAM
18Mb: 1 MEG x 18, 512K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
SYMBOL
C
C
C
C
C
C
C
C
CK
CK
O
A
O
A
I
I
SYMBOL
SYMBOL
q
q
q
q
q
TYP
TYP
JA
JA
JC
JC
JB
4.2
3.5
4.2
4
4
4
4
5
MAX
MAX
TYP
28.9
TYP
10.4
4.5
5.5
4.2
1.7
32
5
4
5
5
5
5
©2003 Micron Technology, Inc.
UNITS
UNITS
UNITS
UNITS
°C/W
°C/W
°C/W
°C/W
°C/W
pF
pF
pF
pF
pF
pF
pF
pF