MT58L1MY18P Micron Semiconductor Products, Inc., MT58L1MY18P Datasheet - Page 3

• Manufacturer Part Number: MT58L1MY18P
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O; 2.5V Vdd, 2.5V I/O, Pipelined, Scd,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, SCD SyncBurst SRAM
MT58L1MY18P1_16_D.fm – Rev. D, Pub 2/03
SA0, SA1, SAs
SA0, SA1, SAs
Functional block diagrams illustrate simplified device operation. See truth tables, pin/ball descriptions, and tim-
ing diagrams for detailed information.
ADSC#
ADSP#
MODE
BWd#
BWb#
BWa#
BWE#
ADSC#
ADSP#
ADV#
BWc#
MODE
BWb#
BWa#
GW#
ADV#
BWE#
CE2#
GW#
CE2#
OE#
CLK
OE#
CE#
CE2
CLK
CE#
CE2
20
19
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
REGISTER
ADDRESS
BYTE “b”
BYTE “a”
REGISTER
BYTE “d”
BYTE “b”
BYTE “a”
ENABLE
BYTE “c”
REGISTER
ENABLE
REGISTER
ADDRESS
Figure 3: Functional Block Diagram
Figure 4: Functional Block Diagram
COUNTER AND
CLR
BINARY
LOGIC
PIPELINED
20
2
ENABLE
PIPELINED
Q1
Q0
19
ENABLE
CLR
SA0-SA1
COUNTER
BINARY
SA0-SA1
18
17
Q1
Q0
512K x 32/36
SA1'
SA0'
SA0'
SA1'
1 Meg x 18
9
9
9
9
9
9
20
WRITE DRIVER
WRITE DRIVER
19
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
BYTE “b”
BYTE “a”
BYTE “d”
BYTE “b”
BYTE “a”
BYTE “c”
3
PIPELINED, SCD SYNCBURST SRAM
18Mb: 1 MEG x 18, 512K x 32/36
9
9
9
9
9
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1 Meg x 9 x 2
MEMORY
512K x 8 x 4
512K x 9 x 4
ARRAY
MEMORY
ARRAY
(x32)
(x36)
18
36
SENSE
AMPS
SENSE
AMPS
18
36
REGISTERS
2
OUTPUT
REGISTERS
4
OUTPUT
18
36
36
OUTPUT
BUFFERS
18
BUFFERS
OUTPUT
©2003 Micron Technology, Inc.
E
E
REGISTERS
REGISTERS
INPUT
18
INPUT
36
DQs
DQPa
DQPb
DQs
DQPa
DQPb
DQPc
DQPd