MT8VDDT6464HD Micron Semiconductor Products, MT8VDDT6464HD Datasheet - Page 19
![no-image](/images/no-image-200.jpg)
MT8VDDT6464HD
Manufacturer Part Number
MT8VDDT6464HD
Description
(MT8VDDTxx64HD) 200-Pin DDR Sdram Sodimms
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT8VDDT6464HD.pdf
(30 pages)
www.DataSheet4U.com
Table 17: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29, 50; notes appear on pages 20–23; 0°C £ T
09005aef806e1d28
DD8C16_32_64x64HDG_B.fm - Rev. B 7/03 EN
AC CHARACTERISTICS
PARAMETER
Data valid output window
REFRESH to REFRESH command interval 128MB
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (-26A, -265, and -202) (Continued)
DD
256MB/ 512MB
128MB
256MB/ 512MB
SYMBOL
t
t
t
19
t
t
XSNR
XSRD
REFC
REFI
VTD
na
A
£ +70°C; V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MIN
200
128MB, 256MB, 512MB (x64)
75
t
0
QH -
-26A/-265
DD
, V
t
DQSQ
MAX
140.6
DD
70.3
15.6
7.8
Q = +2.5V ±0.2V
200-PIN DDR SODIMM
MIN
200
t
80
QH -
0
-202
©2003 Micron Technology, Inc. All rights reserved.
t
DQSQ
MAX
140.6
70.3
15.6
7.8
UNITS
t
ns
µs
µs
µs
µs
ns
ns
CK
NOTES
22
21
21
21
21